TY - JOUR
T1 - Pd layer thickness dependence of tunnel magnetoresistance properties in CoFeB/MgO-based magnetic tunnel junctions with perpendicular anisotropy CoFe/Pd multilayers
AU - Mizunuma, Kotaro
AU - Yamanouchi, Michihiko
AU - Ikeda, Shoji
AU - Sato, Hideo
AU - Yamamoto, Hiroyuki
AU - Gan, Hua Dong
AU - Miura, Katsuya
AU - Hayakawa, Jun
AU - Matsukura, Fumihiro
AU - Ohno, Hideo
PY - 2011/2
Y1 - 2011/2
N2 - The authors investigated tunnel magnetoresistance (TMR) properties in [CoFe/Pd]-multilayer/CoFeB/MgO/CoFeB/[Pd/CoFe]-multilayer magnetic tunnel junctions (MTJs) having two different Pd layer thicknesses. By reducing the Pd layer thickness from 1.2 to 0.2 nm, the TMR ratio was enhanced from 7 to 101% at the annealing temperature (Ta) of 300 °C. The thin Pd layers resulted in high residual B concentration in the CoFeB layer after high-T a annealing and in the suppression of crystallization of the CoFeB layer from the fcc(111)-Pd layer side.
AB - The authors investigated tunnel magnetoresistance (TMR) properties in [CoFe/Pd]-multilayer/CoFeB/MgO/CoFeB/[Pd/CoFe]-multilayer magnetic tunnel junctions (MTJs) having two different Pd layer thicknesses. By reducing the Pd layer thickness from 1.2 to 0.2 nm, the TMR ratio was enhanced from 7 to 101% at the annealing temperature (Ta) of 300 °C. The thin Pd layers resulted in high residual B concentration in the CoFeB layer after high-T a annealing and in the suppression of crystallization of the CoFeB layer from the fcc(111)-Pd layer side.
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U2 - 10.1143/APEX.4.023002
DO - 10.1143/APEX.4.023002
M3 - Article
AN - SCOPUS:79951588579
SN - 1882-0778
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
IS - 2
M1 - 023002
ER -