TY - JOUR
T1 - Peculiar structure of X-ray standing wave lines of Si:As
AU - Hayashi, Koichi
AU - Takahashi, Yukio
AU - Matsubara, Eiichiro
AU - Takemura, Momoko
AU - Mizushima, Ichiro
AU - Tanida, Hajime
AU - Ishii, Masashi
N1 - Funding Information:
This work was performed under the approval of the SPring-8 Program Advisory Committee (2001A0068-ND-np). This study was supported by Industrial Technology Research Grant Program in ’00 from the New Energy and Industrial Development Organization (NEDO) of Japan. Part of this work was financially supported by a Grant-in-Aid for Scientific Research on Priority Areas (B)(2) ‘Localized Quantum Structures’ (12130201) from the Ministry of Education, Science, Sports and Culture.
PY - 2003/1
Y1 - 2003/1
N2 - X-ray standing wave (XSW) lines were measured for As-implanted Si wafers (Si:As) in order to investigate the annealing effect on local structure around As atoms. The observed XSW lines were spiral like and their patterns of an annealed and as-implanted Si:As samples were quite similar, though the EXAFS data of both samples showed different local structures. This result suggested that there existed stable mosaic crystalline phase in a certain region of Si wafer, which formed during As-implantation. The structural difference between the annealed and as-implanted Si:As samples was clarified by the XSW line measurements with highly angular resolution, resulting that the surfaces of the as-implanted Si:As sample were amorphous like and it crystallized by the annealing.
AB - X-ray standing wave (XSW) lines were measured for As-implanted Si wafers (Si:As) in order to investigate the annealing effect on local structure around As atoms. The observed XSW lines were spiral like and their patterns of an annealed and as-implanted Si:As samples were quite similar, though the EXAFS data of both samples showed different local structures. This result suggested that there existed stable mosaic crystalline phase in a certain region of Si wafer, which formed during As-implantation. The structural difference between the annealed and as-implanted Si:As samples was clarified by the XSW line measurements with highly angular resolution, resulting that the surfaces of the as-implanted Si:As sample were amorphous like and it crystallized by the annealing.
KW - Impurity
KW - Local structure
KW - X-ray standing wave
UR - http://www.scopus.com/inward/record.url?scp=0037237759&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037237759&partnerID=8YFLogxK
U2 - 10.1016/S0168-583X(02)01415-5
DO - 10.1016/S0168-583X(02)01415-5
M3 - Article
AN - SCOPUS:0037237759
SN - 0168-583X
VL - 199
SP - 382
EP - 385
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
ER -