Performance and stability of flexible low-voltage organic thin-film transistors based on C 10-DNTT

Ute Zschieschang; Hagen Klauk; Myeong Jin Kang; Kazuo Takimiya; Tsuyoshi Sekitani; Takao Someya; Tobias W. Canzler; Ansgar Werner; Jan Blochwitz-Nimoth

doi:10.1109/ICCDCS.2012.6188911

Performance and stability of flexible low-voltage organic thin-film transistors based on C ₁₀-DNTT

Ute Zschieschang, Hagen Klauk, Myeong Jin Kang, Kazuo Takimiya, Tsuyoshi Sekitani, Takao Someya, Tobias W. Canzler, Ansgar Werner, Jan Blochwitz-Nimoth

SCI - Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

Using the recently developed organic semiconductor C ₁₀-DNTT and a thin, high-capacitance gate dielectric we have fabricated flexible organic thin-film transistors that combine a field-effect mobility of 4.3 cm ²/Vs, an on/off ratio of 10 ⁸, and a subthreshold swing of 68 mV/decade. To improve the charge exchange between the organic semiconductor layer and the metal source and drain contacts, a thin layer of a non-alkylated organic semiconductor (DNTT) sandwiched between two thin layers of a strong organic dopant (NDP-9) were inserted between the C ₁₀-DNTT and the metal contacts. Flexible ring oscillators have a signal propagation delay of 5 μsec per stage at a supply voltage of 3 V.

Original language	English
Title of host publication	2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
DOIs	https://doi.org/10.1109/ICCDCS.2012.6188911
Publication status	Published - 2012
Event	2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 - Playa del Carmen, Mexico Duration: 2012 Mar 14 → 2012 Mar 17

Publication series

Name	2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

Conference

Conference	2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
Country/Territory	Mexico
City	Playa del Carmen
Period	12/3/14 → 12/3/17

Keywords

organic circuits
organic contact doping
organic thin-film transistors

Access to Document

10.1109/ICCDCS.2012.6188911

Cite this

Zschieschang, U., Klauk, H., Kang, M. J., Takimiya, K., Sekitani, T., Someya, T., Canzler, T. W., Werner, A., & Blochwitz-Nimoth, J. (2012). Performance and stability of flexible low-voltage organic thin-film transistors based on C ₁₀-DNTT. In 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 Article 6188911 (2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012). https://doi.org/10.1109/ICCDCS.2012.6188911

@inproceedings{fa5273ef7fd345a482574089e9a21360,

title = "Performance and stability of flexible low-voltage organic thin-film transistors based on C 10-DNTT",

abstract = "Using the recently developed organic semiconductor C 10-DNTT and a thin, high-capacitance gate dielectric we have fabricated flexible organic thin-film transistors that combine a field-effect mobility of 4.3 cm 2/Vs, an on/off ratio of 10 8, and a subthreshold swing of 68 mV/decade. To improve the charge exchange between the organic semiconductor layer and the metal source and drain contacts, a thin layer of a non-alkylated organic semiconductor (DNTT) sandwiched between two thin layers of a strong organic dopant (NDP-9) were inserted between the C 10-DNTT and the metal contacts. Flexible ring oscillators have a signal propagation delay of 5 μsec per stage at a supply voltage of 3 V.",

keywords = "organic circuits, organic contact doping, organic thin-film transistors",

author = "Ute Zschieschang and Hagen Klauk and Kang, {Myeong Jin} and Kazuo Takimiya and Tsuyoshi Sekitani and Takao Someya and Canzler, {Tobias W.} and Ansgar Werner and Jan Blochwitz-Nimoth",

year = "2012",

doi = "10.1109/ICCDCS.2012.6188911",

language = "English",

isbn = "9781457711169",

series = "2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012",

booktitle = "2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012",

note = "2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 ; Conference date: 14-03-2012 Through 17-03-2012",

}

Zschieschang, U, Klauk, H, Kang, MJ, Takimiya, K, Sekitani, T, Someya, T, Canzler, TW, Werner, A & Blochwitz-Nimoth, J 2012, Performance and stability of flexible low-voltage organic thin-film transistors based on C ₁₀-DNTT. in 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012., 6188911, 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012, 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012, Playa del Carmen, Mexico, 12/3/14. https://doi.org/10.1109/ICCDCS.2012.6188911

Performance and stability of flexible low-voltage organic thin-film transistors based on C ₁₀-DNTT. / Zschieschang, Ute; Klauk, Hagen; Kang, Myeong Jin et al.
2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012. 2012. 6188911 (2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Performance and stability of flexible low-voltage organic thin-film transistors based on C 10-DNTT

AU - Zschieschang, Ute

AU - Klauk, Hagen

AU - Kang, Myeong Jin

AU - Takimiya, Kazuo

AU - Sekitani, Tsuyoshi

AU - Someya, Takao

AU - Canzler, Tobias W.

AU - Werner, Ansgar

AU - Blochwitz-Nimoth, Jan

PY - 2012

Y1 - 2012

N2 - Using the recently developed organic semiconductor C 10-DNTT and a thin, high-capacitance gate dielectric we have fabricated flexible organic thin-film transistors that combine a field-effect mobility of 4.3 cm 2/Vs, an on/off ratio of 10 8, and a subthreshold swing of 68 mV/decade. To improve the charge exchange between the organic semiconductor layer and the metal source and drain contacts, a thin layer of a non-alkylated organic semiconductor (DNTT) sandwiched between two thin layers of a strong organic dopant (NDP-9) were inserted between the C 10-DNTT and the metal contacts. Flexible ring oscillators have a signal propagation delay of 5 μsec per stage at a supply voltage of 3 V.

AB - Using the recently developed organic semiconductor C 10-DNTT and a thin, high-capacitance gate dielectric we have fabricated flexible organic thin-film transistors that combine a field-effect mobility of 4.3 cm 2/Vs, an on/off ratio of 10 8, and a subthreshold swing of 68 mV/decade. To improve the charge exchange between the organic semiconductor layer and the metal source and drain contacts, a thin layer of a non-alkylated organic semiconductor (DNTT) sandwiched between two thin layers of a strong organic dopant (NDP-9) were inserted between the C 10-DNTT and the metal contacts. Flexible ring oscillators have a signal propagation delay of 5 μsec per stage at a supply voltage of 3 V.

KW - organic circuits

KW - organic contact doping

KW - organic thin-film transistors

UR - http://www.scopus.com/inward/record.url?scp=84860991682&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860991682&partnerID=8YFLogxK

U2 - 10.1109/ICCDCS.2012.6188911

DO - 10.1109/ICCDCS.2012.6188911

M3 - Conference contribution

AN - SCOPUS:84860991682

SN - 9781457711169

T3 - 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

BT - 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

T2 - 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

Y2 - 14 March 2012 through 17 March 2012

ER -

Zschieschang U, Klauk H, Kang MJ, Takimiya K, Sekitani T, Someya T et al. Performance and stability of flexible low-voltage organic thin-film transistors based on C ₁₀-DNTT. In 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012. 2012. 6188911. (2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012). doi: 10.1109/ICCDCS.2012.6188911