Performance enhancement of tunnel field-effect transistors by synthetic electric field effect

Yukinori Morita; Takahiro Mori; Shinji Migita; Wataru Mizubayashi; Akihito Tanabe; Koichi Fukuda; Takashi Matsukawa; Kazuhiko Endo; Shinichi O'Uchi; Yong Xun Liu; Meishoku Masahara; Hiroyuki Ota

doi:10.1109/LED.2014.2323337

Performance enhancement of tunnel field-effect transistors by synthetic electric field effect

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'Uchi, Yong Xun Liu, Meishoku Masahara, Hiroyuki Ota

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

In this letter, we propose a synthetic electric field (SE) effect to enhance the performance of tunnel field-effect transistors (TFETs). The novel SE-TFET architecture utilizes both horizontal and vertical electric fields induced by a gate electrode that is wrapped around an ultrathin epitaxial channel. The drain current of the SE-TFET is increased up to 100 times in comparison with those of conventional TFETs. The subthreshold slope of the SE-TFET also improved, and enhanced to 52 mV/decade by scaling the channel width and channel thickness.

Original language	English
Article number	6819818
Pages (from-to)	792-794
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	7
DOIs	https://doi.org/10.1109/LED.2014.2323337
Publication status	Published - 2014 Jul

Keywords

drain current
epitaxial growth
FinFET
silicon
Tunnel FET (TFET)

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10.1109/LED.2014.2323337

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abstract = "In this letter, we propose a synthetic electric field (SE) effect to enhance the performance of tunnel field-effect transistors (TFETs). The novel SE-TFET architecture utilizes both horizontal and vertical electric fields induced by a gate electrode that is wrapped around an ultrathin epitaxial channel. The drain current of the SE-TFET is increased up to 100 times in comparison with those of conventional TFETs. The subthreshold slope of the SE-TFET also improved, and enhanced to 52 mV/decade by scaling the channel width and channel thickness.",

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T1 - Performance enhancement of tunnel field-effect transistors by synthetic electric field effect

AU - Morita, Yukinori

AU - Mori, Takahiro

AU - Migita, Shinji

AU - Mizubayashi, Wataru

AU - Tanabe, Akihito

AU - Fukuda, Koichi

AU - Matsukawa, Takashi

AU - Endo, Kazuhiko

AU - O'Uchi, Shinichi

AU - Liu, Yong Xun

AU - Masahara, Meishoku

AU - Ota, Hiroyuki

PY - 2014/7

Y1 - 2014/7

N2 - In this letter, we propose a synthetic electric field (SE) effect to enhance the performance of tunnel field-effect transistors (TFETs). The novel SE-TFET architecture utilizes both horizontal and vertical electric fields induced by a gate electrode that is wrapped around an ultrathin epitaxial channel. The drain current of the SE-TFET is increased up to 100 times in comparison with those of conventional TFETs. The subthreshold slope of the SE-TFET also improved, and enhanced to 52 mV/decade by scaling the channel width and channel thickness.

AB - In this letter, we propose a synthetic electric field (SE) effect to enhance the performance of tunnel field-effect transistors (TFETs). The novel SE-TFET architecture utilizes both horizontal and vertical electric fields induced by a gate electrode that is wrapped around an ultrathin epitaxial channel. The drain current of the SE-TFET is increased up to 100 times in comparison with those of conventional TFETs. The subthreshold slope of the SE-TFET also improved, and enhanced to 52 mV/decade by scaling the channel width and channel thickness.

KW - drain current

KW - epitaxial growth

KW - FinFET

KW - silicon

KW - Tunnel FET (TFET)

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Performance enhancement of tunnel field-effect transistors by synthetic electric field effect

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Keywords

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