@article{1e9cdcfb653745fc8931e762fcc3fcd6,
title = "Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model",
abstract = "The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.",
keywords = "Distributed-element circuit, Epitaxial growth, Parallel plate tunneling, Tunnel FET",
author = "Yukinori Morita and Takahiro Mori and Shinji Migita and Wataru Mizubayashi and Akihito Tanabe and Koichi Fukuda and Takashi Matsukawa and Kazuhiko Endo and O'Uchi, {Shin Ichi} and Yongxun Liu and Meishoku Masahara and Hiroyuki Ota",
note = "Funding Information: The work was supported by the Japan Society for the Promotion of Science (JSPS) through the First Program, “Development of Core Technologies for Green Nanoelectronics” initiated by the Council for Science and Technology Policy (CSTP). Publisher Copyright: {\textcopyright} 2014 Elsevier Ltd. All rights reserved.",
year = "2014",
month = dec,
doi = "10.1016/j.sse.2014.06.007",
language = "English",
volume = "102",
pages = "82--86",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Ltd.",
}