Performance of silicon ballistic nanowire MOSFET with diverse orientations and diameters

A. Abudukelimu; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3360758

Performance of silicon ballistic nanowire MOSFET with diverse orientations and diameters

A. Abudukelimu, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

To investigate the performance of the silicon ballistic nanowire MOSFET with diverse orientations and diameters, the subband structure of silicon nanowire has been calculated by using the tight binding simulator, and observed changes of minimum energy in the conduction and the valence subband and effective mass of electron and hole. This paper also presents a compact model, which is used in numerical evaluation of the current vs. voltage characteristics of ballistic devices. Finally, the drain saturation current of n- and p-channel device with different orientations and diameters are shown.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2010, CSTIC 2010
Publisher	Electrochemical Society Inc.
Pages	1111-1116
Number of pages	6
Edition	1
ISBN (Electronic)	9781607681564
ISBN (Print)	9781607682639
DOIs	https://doi.org/10.1149/1.3360758
Publication status	Published - 2010
Externally published	Yes
Event	China Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China Duration: 2010 Mar 18 → 2010 Mar 19

Publication series

Name	ECS Transactions
Number	1
Volume	27
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	China Semiconductor Technology International Conference 2010, CSTIC 2010
Country/Territory	China
City	Shanghai
Period	10/3/18 → 10/3/19

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3360758

Cite this

Abudukelimu, A., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2010). Performance of silicon ballistic nanowire MOSFET with diverse orientations and diameters. In China Semiconductor Technology International Conference 2010, CSTIC 2010 (1 ed., pp. 1111-1116). (ECS Transactions; Vol. 27, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.3360758

Performance of silicon ballistic nanowire MOSFET with diverse orientations and diameters. / Abudukelimu, A.; Kakushima, K.; Ahmet, P. et al.

China Semiconductor Technology International Conference 2010, CSTIC 2010. 1. ed. Electrochemical Society Inc., 2010. p. 1111-1116 (ECS Transactions; Vol. 27, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abudukelimu, A, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T & Iwai, H 2010, Performance of silicon ballistic nanowire MOSFET with diverse orientations and diameters. in China Semiconductor Technology International Conference 2010, CSTIC 2010. 1 edn, ECS Transactions, no. 1, vol. 27, Electrochemical Society Inc., pp. 1111-1116, China Semiconductor Technology International Conference 2010, CSTIC 2010, Shanghai, China, 10/3/18. https://doi.org/10.1149/1.3360758

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abstract = "To investigate the performance of the silicon ballistic nanowire MOSFET with diverse orientations and diameters, the subband structure of silicon nanowire has been calculated by using the tight binding simulator, and observed changes of minimum energy in the conduction and the valence subband and effective mass of electron and hole. This paper also presents a compact model, which is used in numerical evaluation of the current vs. voltage characteristics of ballistic devices. Finally, the drain saturation current of n- and p-channel device with different orientations and diameters are shown.",

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doi = "10.1149/1.3360758",

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AU - Kakushima, K.

AU - Ahmet, P.

AU - Tsutsui, K.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Natori, K.

AU - Hattori, T.

AU - Iwai, H.

PY - 2010

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N2 - To investigate the performance of the silicon ballistic nanowire MOSFET with diverse orientations and diameters, the subband structure of silicon nanowire has been calculated by using the tight binding simulator, and observed changes of minimum energy in the conduction and the valence subband and effective mass of electron and hole. This paper also presents a compact model, which is used in numerical evaluation of the current vs. voltage characteristics of ballistic devices. Finally, the drain saturation current of n- and p-channel device with different orientations and diameters are shown.

AB - To investigate the performance of the silicon ballistic nanowire MOSFET with diverse orientations and diameters, the subband structure of silicon nanowire has been calculated by using the tight binding simulator, and observed changes of minimum energy in the conduction and the valence subband and effective mass of electron and hole. This paper also presents a compact model, which is used in numerical evaluation of the current vs. voltage characteristics of ballistic devices. Finally, the drain saturation current of n- and p-channel device with different orientations and diameters are shown.

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T3 - ECS Transactions

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BT - China Semiconductor Technology International Conference 2010, CSTIC 2010

PB - Electrochemical Society Inc.

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Performance of silicon ballistic nanowire MOSFET with diverse orientations and diameters

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