@inproceedings{bf6da99fe1514fd589e727e0bb2dd23a,
title = "Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm",
abstract = "CoFeB-MgO based magnetic tunnel junction with perpendicular easy axis (p-MTJ) shows a high potential to be used in spintronics based very large scale integrated circuits and spin-transfer-torque magnetorestive random access memories. In this paper, we review development of p-MTJ using single CoFeB-MgO and double CoFeB-MgO interface structures. The TMR ratio shows 164% after annealing at 400 °C, indicating the CoFeB-MgO p-MTJs have capability for back-end-of-line. Scaling properties of p-MTJs using double CoFeB-MgO interface structure are also reviewed.",
author = "S. Ikeda and H. Sato and H. Honjo and Enobio, {E. C.I.} and S. Ishikawa and M. Yamanouchi and S. Fukami and S. Kanai and F. Matsukura and T. Endoh and H. Ohno",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 ; Conference date: 15-12-2014 Through 17-12-2014",
year = "2015",
month = feb,
day = "20",
doi = "10.1109/IEDM.2014.7047160",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "February",
pages = "33.2.1--33.2.4",
booktitle = "2014 IEEE International Electron Devices Meeting, IEDM 2014",
address = "United States",
edition = "February",
}