Perpendicular magnetic anisotropy of (001)-textured poly-crystalline MnAlGe films

Takahide Kubota; Yohei Kota; Keita Ito; Rie Y. Umetsu; Mingling Sun; Masaki Mizuguchi; Koki Takanashi

doi:10.1063/1.5130388

Perpendicular magnetic anisotropy of (001)-textured poly-crystalline MnAlGe films

Takahide Kubota, Yohei Kota, Keita Ito, Rie Y. Umetsu, Mingling Sun, Masaki Mizuguchi, Koki Takanashi

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Cu₂Sb-type intermetallic compound, MnAlGe, is known to exhibit uniaxial magnetocrystalline anisotropy and relatively small saturation magnetization, which is suitable for spintronic application, e.g. spin-transfer phenomena requiring small critical current density. Ge-concentration dependence of the crystal structures, saturation magnetization, M_s, and perpendicular magnetic anisotropy, K_u was investigated for MnAlGe films prepared onto silicon substrates with a thermally oxidized amorphous layer. For the stoichiometric and Ge-rich samples, the films exhibited (001)-texture with perpendicular magnetization. The maximum values of M_s and K_u were 270 emu/cm³ and 4.8 × 10⁶ erg/cm³, respectively, which were comparable values with those reported for bulk and epitaxially grown films in literatures.

Original language	English
Article number	015122
Journal	AIP Advances
Volume	10
Issue number	1
DOIs	https://doi.org/10.1063/1.5130388
Publication status	Published - 2020 Jan 1

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@article{643fce4ff0224510bef68b0a4f56030b,

title = "Perpendicular magnetic anisotropy of (001)-textured poly-crystalline MnAlGe films",

abstract = "Cu2Sb-type intermetallic compound, MnAlGe, is known to exhibit uniaxial magnetocrystalline anisotropy and relatively small saturation magnetization, which is suitable for spintronic application, e.g. spin-transfer phenomena requiring small critical current density. Ge-concentration dependence of the crystal structures, saturation magnetization, Ms, and perpendicular magnetic anisotropy, Ku was investigated for MnAlGe films prepared onto silicon substrates with a thermally oxidized amorphous layer. For the stoichiometric and Ge-rich samples, the films exhibited (001)-texture with perpendicular magnetization. The maximum values of Ms and Ku were 270 emu/cm3 and 4.8 × 106 erg/cm3, respectively, which were comparable values with those reported for bulk and epitaxially grown films in literatures.",

author = "Takahide Kubota and Yohei Kota and Keita Ito and Umetsu, {Rie Y.} and Mingling Sun and Masaki Mizuguchi and Koki Takanashi",

note = "Funding Information: This work was partially supported by a research granted from The Murata Science Foundation (H30-027), and by a cooperative research program (No. 19G0408) of the CRDAM-IMR, Tohoku Univ. Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = jan,

day = "1",

doi = "10.1063/1.5130388",

language = "English",

volume = "10",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Perpendicular magnetic anisotropy of (001)-textured poly-crystalline MnAlGe films

AU - Kubota, Takahide

AU - Kota, Yohei

AU - Ito, Keita

AU - Umetsu, Rie Y.

AU - Sun, Mingling

AU - Mizuguchi, Masaki

AU - Takanashi, Koki

N1 - Funding Information: This work was partially supported by a research granted from The Murata Science Foundation (H30-027), and by a cooperative research program (No. 19G0408) of the CRDAM-IMR, Tohoku Univ. Publisher Copyright: © 2020 Author(s).

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Cu2Sb-type intermetallic compound, MnAlGe, is known to exhibit uniaxial magnetocrystalline anisotropy and relatively small saturation magnetization, which is suitable for spintronic application, e.g. spin-transfer phenomena requiring small critical current density. Ge-concentration dependence of the crystal structures, saturation magnetization, Ms, and perpendicular magnetic anisotropy, Ku was investigated for MnAlGe films prepared onto silicon substrates with a thermally oxidized amorphous layer. For the stoichiometric and Ge-rich samples, the films exhibited (001)-texture with perpendicular magnetization. The maximum values of Ms and Ku were 270 emu/cm3 and 4.8 × 106 erg/cm3, respectively, which were comparable values with those reported for bulk and epitaxially grown films in literatures.

AB - Cu2Sb-type intermetallic compound, MnAlGe, is known to exhibit uniaxial magnetocrystalline anisotropy and relatively small saturation magnetization, which is suitable for spintronic application, e.g. spin-transfer phenomena requiring small critical current density. Ge-concentration dependence of the crystal structures, saturation magnetization, Ms, and perpendicular magnetic anisotropy, Ku was investigated for MnAlGe films prepared onto silicon substrates with a thermally oxidized amorphous layer. For the stoichiometric and Ge-rich samples, the films exhibited (001)-texture with perpendicular magnetization. The maximum values of Ms and Ku were 270 emu/cm3 and 4.8 × 106 erg/cm3, respectively, which were comparable values with those reported for bulk and epitaxially grown films in literatures.

UR - http://www.scopus.com/inward/record.url?scp=85077985882&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85077985882&partnerID=8YFLogxK

U2 - 10.1063/1.5130388

DO - 10.1063/1.5130388

M3 - Article

AN - SCOPUS:85077985882

SN - 2158-3226

VL - 10

JO - AIP Advances

JF - AIP Advances

IS - 1

M1 - 015122

ER -

Perpendicular magnetic anisotropy of (001)-textured poly-crystalline MnAlGe films

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