Perpendicularly magnetized Cu2Sb type (Mn-Cr)AlGe films onto amorphous SiO2

Takahide Kubota, Yohei Kota, Keita Ito, Rie Y. Umetsu, Mingling Sun, Masaki Mizuguchi, Koki Takanashi

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Element substitution effects on the crystal structure and magnetic properties are investigated by substituting Cr atoms for a part of Mn-sites in the Cu2Sb-type MnAlGe. Perpendicularly magnetized (001)-textured films were successfully fabricated onto thermally oxidized silicon substrates without underlayers for the Cr-concentration ranging from 0 to 0.45 in the stoichiometry. The uniaxial magnetic anisotropy energy, K u is enhanced by Cr-substitution, and the maximum value is 7.3 × 106 erg cm-3 at room temperature. The enhancement of K u can be explained by the change of electronic structure due to Cr-substitution, based on the second order perturbation theory with spin-orbit interaction.

Original languageEnglish
Article number103002
JournalApplied Physics Express
Issue number10
Publication statusPublished - 2019 Oct 1


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