Perpendicularly magnetized ferrimagnetic [Mn50Ga50/Co2FeAl] superlattice and the utilization in magnetic tunnel junctions

Q. L. Ma; X. M. Zhang; T. Miyazaki; S. Mizukami

doi:10.1063/1.4929831

Perpendicularly magnetized ferrimagnetic [Mn₅₀Ga₅₀/Co₂FeAl] superlattice and the utilization in magnetic tunnel junctions

Q. L. Ma, X. M. Zhang, T. Miyazaki, S. Mizukami

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The ferrimagnetic superlattice (SL) [MnGa/Co₂FeAl]_n exhibiting perpendicular magnetic anisotropy opened a new method for spintronics materials used in magnetic random access memory, because of the high anisotropy, small damping constant and tunable magnetization. In this work, we fabricated SLs with different MnGa composition and studied the MnGa composition dependence of the structure and magnetic properties of the SLs. Furthermore, we fabricated fully perpendicular magnetic tunnel junctions with SLs as both top and bottom electrodes. A clear tunnel magnetoresistance (TMR) effect with TMR ratio of 1.3% at room temperature was observed.

Original language	English
Article number	087177
Journal	AIP Advances
Volume	5
Issue number	8
DOIs	https://doi.org/10.1063/1.4929831
Publication status	Published - 2015 Aug 1

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.4929831

Cite this

@article{c03c31c4031d45c78dc89a07a0cedd1f,

title = "Perpendicularly magnetized ferrimagnetic [Mn50Ga50/Co2FeAl] superlattice and the utilization in magnetic tunnel junctions",

abstract = "The ferrimagnetic superlattice (SL) [MnGa/Co2FeAl]n exhibiting perpendicular magnetic anisotropy opened a new method for spintronics materials used in magnetic random access memory, because of the high anisotropy, small damping constant and tunable magnetization. In this work, we fabricated SLs with different MnGa composition and studied the MnGa composition dependence of the structure and magnetic properties of the SLs. Furthermore, we fabricated fully perpendicular magnetic tunnel junctions with SLs as both top and bottom electrodes. A clear tunnel magnetoresistance (TMR) effect with TMR ratio of 1.3% at room temperature was observed.",

author = "Ma, {Q. L.} and Zhang, {X. M.} and T. Miyazaki and S. Mizukami",

note = "Publisher Copyright: {\textcopyright} 2015 Author(s).",

year = "2015",

month = aug,

day = "1",

doi = "10.1063/1.4929831",

language = "English",

volume = "5",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Perpendicularly magnetized ferrimagnetic [Mn50Ga50/Co2FeAl] superlattice and the utilization in magnetic tunnel junctions

AU - Ma, Q. L.

AU - Zhang, X. M.

AU - Miyazaki, T.

AU - Mizukami, S.

PY - 2015/8/1

Y1 - 2015/8/1

N2 - The ferrimagnetic superlattice (SL) [MnGa/Co2FeAl]n exhibiting perpendicular magnetic anisotropy opened a new method for spintronics materials used in magnetic random access memory, because of the high anisotropy, small damping constant and tunable magnetization. In this work, we fabricated SLs with different MnGa composition and studied the MnGa composition dependence of the structure and magnetic properties of the SLs. Furthermore, we fabricated fully perpendicular magnetic tunnel junctions with SLs as both top and bottom electrodes. A clear tunnel magnetoresistance (TMR) effect with TMR ratio of 1.3% at room temperature was observed.

AB - The ferrimagnetic superlattice (SL) [MnGa/Co2FeAl]n exhibiting perpendicular magnetic anisotropy opened a new method for spintronics materials used in magnetic random access memory, because of the high anisotropy, small damping constant and tunable magnetization. In this work, we fabricated SLs with different MnGa composition and studied the MnGa composition dependence of the structure and magnetic properties of the SLs. Furthermore, we fabricated fully perpendicular magnetic tunnel junctions with SLs as both top and bottom electrodes. A clear tunnel magnetoresistance (TMR) effect with TMR ratio of 1.3% at room temperature was observed.

UR - http://www.scopus.com/inward/record.url?scp=84940503547&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940503547&partnerID=8YFLogxK

U2 - 10.1063/1.4929831

DO - 10.1063/1.4929831

M3 - Article

AN - SCOPUS:84940503547

SN - 2158-3226

VL - 5

JO - AIP Advances

JF - AIP Advances

IS - 8

M1 - 087177

ER -

Perpendicularly magnetized ferrimagnetic [Mn₅₀Ga₅₀/Co₂FeAl] superlattice and the utilization in magnetic tunnel junctions

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this