Abstract
A persistent silyl radical, tris(t-butyldimethylsilyl)silyl radical, (t-BuMe2Si)3Si· (1), was produced by two new methods in addition to a conventional hydrogen abstraction from the corresponding hydrosilane: one-electron oxidation of (t-BuMe2Si)3SiNa (2) by NO+BF4- and one-electron reduction of (t-BuMe2Si)3SiBr (3) by sodium.
Original language | English |
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Pages (from-to) | 1097-1098 |
Number of pages | 2 |
Journal | Chemistry Letters |
Issue number | 11 |
DOIs | |
Publication status | Published - 1998 Jan 1 |
ASJC Scopus subject areas
- Chemistry(all)