We propose, herein, a method by which to measure the phase of the carrier in a high-frequency carrier-type sensor (giant magneto impedance sensor). The proposed method is based on a carrier suppression technique. The phase of the carrier signal changed dramatically by approximately 180° around the carrier suppression when a small dc field was applied. The phase sensitivity for a small dc field reached 3600°/Oe. In addition, in the present study, we investigate the relationship between phase sensitivity and suppressed carrier level in the suppression circuit, the measured data nearly corresponded to theoretical data.
- Carrier suppression technique
- Giant magneto impedance (GMI)
- High-frequency carrier-type sensor
- Phase detection
- Thin film