Phase formation and crystal growth of Ca3TaAl3Si2O14 piezoelectric single crystal

Yuui Yokota; Yuji Ohashi; Masao Yoshino; Akihiro Yamaji; Shunsuke Kurosawa; Kei Kamada; Akira Yoshikawa

doi:10.7567/JJAP.57.11UD11

Phase formation and crystal growth of Ca₃TaAl₃Si₂O₁₄ piezoelectric single crystal

Yuui Yokota, Yuji Ohashi, Masao Yoshino, Akihiro Yamaji, Shunsuke Kurosawa, Kei Kamada, Akira Yoshikawa

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Ca₃TaAl₃Si₂O₁₄ (CTAS) piezoelectric powders were sintered at various temperatures to investigate phase formation. The CTAS powder sintered at 1350 °C was composed of a main phase with a langasite-type structure in addition to two secondary phases, whereas the main phases of the CTAS powders sintered at 1200 and 1300 °C were the secondary phases in X-ray diffraction patterns. CTAS single crystals with a diameter of 1 in. were grown by a Czochralski method using the sintered powders, and CTAS single crystals without impurity phases could be grown using the powder sintered at 1350 °C. A higher sintering temperature of starting materials contributes to the creation of CTAS single crystals without impurity phases.

Original language	English
Article number	11UD11
Journal	Japanese Journal of Applied Physics
Volume	57
Issue number	11
DOIs	https://doi.org/10.7567/JJAP.57.11UD11
Publication status	Published - 2018 Nov

Access to Document

10.7567/JJAP.57.11UD11

Cite this

@article{701992477cae436582a01fd9297321a5,

title = "Phase formation and crystal growth of Ca3TaAl3Si2O14 piezoelectric single crystal",

abstract = "Ca3TaAl3Si2O14 (CTAS) piezoelectric powders were sintered at various temperatures to investigate phase formation. The CTAS powder sintered at 1350 °C was composed of a main phase with a langasite-type structure in addition to two secondary phases, whereas the main phases of the CTAS powders sintered at 1200 and 1300 °C were the secondary phases in X-ray diffraction patterns. CTAS single crystals with a diameter of 1 in. were grown by a Czochralski method using the sintered powders, and CTAS single crystals without impurity phases could be grown using the powder sintered at 1350 °C. A higher sintering temperature of starting materials contributes to the creation of CTAS single crystals without impurity phases.",

author = "Yuui Yokota and Yuji Ohashi and Masao Yoshino and Akihiro Yamaji and Shunsuke Kurosawa and Kei Kamada and Akira Yoshikawa",

note = "Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics.",

year = "2018",

month = nov,

doi = "10.7567/JJAP.57.11UD11",

language = "English",

volume = "57",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11",

}

TY - JOUR

T1 - Phase formation and crystal growth of Ca3TaAl3Si2O14 piezoelectric single crystal

AU - Yokota, Yuui

AU - Ohashi, Yuji

AU - Yoshino, Masao

AU - Yamaji, Akihiro

AU - Kurosawa, Shunsuke

AU - Kamada, Kei

AU - Yoshikawa, Akira

PY - 2018/11

Y1 - 2018/11

N2 - Ca3TaAl3Si2O14 (CTAS) piezoelectric powders were sintered at various temperatures to investigate phase formation. The CTAS powder sintered at 1350 °C was composed of a main phase with a langasite-type structure in addition to two secondary phases, whereas the main phases of the CTAS powders sintered at 1200 and 1300 °C were the secondary phases in X-ray diffraction patterns. CTAS single crystals with a diameter of 1 in. were grown by a Czochralski method using the sintered powders, and CTAS single crystals without impurity phases could be grown using the powder sintered at 1350 °C. A higher sintering temperature of starting materials contributes to the creation of CTAS single crystals without impurity phases.

AB - Ca3TaAl3Si2O14 (CTAS) piezoelectric powders were sintered at various temperatures to investigate phase formation. The CTAS powder sintered at 1350 °C was composed of a main phase with a langasite-type structure in addition to two secondary phases, whereas the main phases of the CTAS powders sintered at 1200 and 1300 °C were the secondary phases in X-ray diffraction patterns. CTAS single crystals with a diameter of 1 in. were grown by a Czochralski method using the sintered powders, and CTAS single crystals without impurity phases could be grown using the powder sintered at 1350 °C. A higher sintering temperature of starting materials contributes to the creation of CTAS single crystals without impurity phases.

UR - http://www.scopus.com/inward/record.url?scp=85057173662&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057173662&partnerID=8YFLogxK

U2 - 10.7567/JJAP.57.11UD11

DO - 10.7567/JJAP.57.11UD11

M3 - Article

AN - SCOPUS:85057173662

SN - 0021-4922

VL - 57

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11

M1 - 11UD11

ER -

Phase formation and crystal growth of Ca₃TaAl₃Si₂O₁₄ piezoelectric single crystal

Abstract

Access to Document

Other files and links

Fingerprint

Cite this