Abstract
Simultaneous chalcogenization of CuIn(Sy,Se1-y)2 (CISSe) thin films has been demonstrated using organometallic sources such as diethylselenide [(C2H5)2Se] and ditertiarybutylsulfide [(t-C4H9)2S] to obtain homogeneous CISSe pseudobinary alloys with controlled amounts of Se and S species. Low-temperature chalcogenization at 300 °C resulted in the formation of Cu-SSe and In-SSe alloys diffused into the Cu11In9 metallic precursor. On the other hand, high-temperature chalcogenization produced CISSe thin films without additional phases. The obtained results can be used for elucidating the mechanism of simultaneous chalcogenization and development of high-performance and cost-effective commercial applications.
Original language | English |
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Article number | e201600159 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 14 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2017 Jun |
Keywords
- CuIn(S,Se)
- metalorganic source
- selenization
- sulfurization