Phase transition and anomalous scaling in the quantum Hall transport of topological-insulator Sn- B i1.1 S b0.9 T e2 S devices

Faji Xie, Shuai Zhang, Qianqian Liu, Chuanying Xi, Ting Ting Kang, Rui Wang, Boyuan Wei, Xing Chen Pan, Minhao Zhang, Fucong Fei, Xuefeng Wang, Li Pi, Geliang L. Yu, Baigeng Wang, Fengqi Song

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision of ∼1/1000e2/h is considered. Two exponential scaling regimes are observed in temperature-dependent transport dissipation, one of which accords with thermal-activation behavior with a gap of 2.8 meV (>20 K), the other being attributed to variable-range hopping (1-20 K). Magnetic-field-driven plateau-to-plateau transition gives scaling relations of (dRxy/dB)maxT-κ and ΔB-1T-κ with a consistent exponent of κ ∼ 0.2, which is half the universal value for a conventional two-dimensional electron gas. This is evidence of percolation assisted by quantum tunneling and reveals the dominance of electron-electron interaction of the topological surface states.

Original languageEnglish
Article number081113
JournalPhysical Review B
Volume99
Issue number8
DOIs
Publication statusPublished - 2019 Feb 13
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Phase transition and anomalous scaling in the quantum Hall transport of topological-insulator Sn- B i1.1 S b0.9 T e2 S devices'. Together they form a unique fingerprint.

Cite this