Phosphorus atomic layer doping in Ge using RPCVD

Engineering

• Assuming 25%
• Atomic Layer 100%
• Deposition System 25%
• Equilibrium Constant 25%
• Exposure Time 25%
• Fabrication 25%
• Ge Surface 25%
• Kinetic Model 25%
• Monolayer 50%
• Partial Pressure 50%
• Reaction Rate Constant 25%
• Reduced Pressure 50%
• Saturation Value 50%
• Solubility 25%
• Surfaces 50%
• Temperature 50%
• Thermal Equilibrium 25%

Physics

• Adsorption 25%
• Fabrication 25%
• Growth 25%
• Hydrogen 75%
• Increasing 25%
• Temperature 50%
• Wafer 25%

Material Science

• Monolayers 50%
• Surface 50%