Phosphorus diffusion from in-situ doped Si1-xGex epitaxial films into Si at 800 °C was investigated using secondary ion mass spectroscopy and differential resistance measurements. The surface P concentration in the diffused layer in Si was higher than the P concentration in the Si1-xGex film in the present conditions, which signifies the segregation of P from the Si1-xGex film into Si. The segregation coefficient, defined as the ratio of the active P concentration in the Si to that in the Si1-xGex film, was about 2.5 in the case of the Si0.75Ge0.25 film as a diffusion source and increased with increasing Ge fraction. The P diffusion profiles in Si were normalized by x/√t, even though the segregation of P occurred. The high concentration diffusion characteristics of P in Si were similar to those reported by using conventional diffusion sources.
|Number of pages
|Materials Research Society Symposium - Proceedings
|Published - 1999
|Proceedings of the 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing' - San Francisco, CA, USA
Duration: 1999 Apr 5 → 1999 Apr 7