Phosphorus diffusion from doped Si1-xGex films into silicon

S. Kobayashi, M. Iizuka, T. Aoki, N. Mikoshiba, M. Sakuraba, T. Matsuura, J. Murota

Research output: Contribution to journalConference articlepeer-review


Phosphorus diffusion from in-situ doped Si1-xGex epitaxial films into Si at 800 °C was investigated using secondary ion mass spectroscopy and differential resistance measurements. The surface P concentration in the diffused layer in Si was higher than the P concentration in the Si1-xGex film in the present conditions, which signifies the segregation of P from the Si1-xGex film into Si. The segregation coefficient, defined as the ratio of the active P concentration in the Si to that in the Si1-xGex film, was about 2.5 in the case of the Si0.75Ge0.25 film as a diffusion source and increased with increasing Ge fraction. The P diffusion profiles in Si were normalized by x/√t, even though the segregation of P occurred. The high concentration diffusion characteristics of P in Si were similar to those reported by using conventional diffusion sources.

Original languageEnglish
Pages (from-to)265-269
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1999
EventProceedings of the 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing' - San Francisco, CA, USA
Duration: 1999 Apr 51999 Apr 7


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