TY - JOUR
T1 - Photo-catalysis effect of III-V nitride film
AU - Sumiya, Masatomo
AU - Ohara, Keisuke
AU - Ohsawa, Takeo
AU - Kawai, Yu
AU - Shirai, Masato
AU - Fuke, Shunro
AU - Koinuma, Hideomi
AU - Matsumoto, Yuji
PY - 2007
Y1 - 2007
N2 - We have studied the photo catalysis effect in III-V nitride film having the potential overall water splitting under UV- or visible light irradiation. It was found that the photo catalysis effect was greater on the surface of GaN film with Ga-face (+c) polarity than that with N-face (-c) polarity. This polarity dependence was discussed in term of band profile caused by the spontaneous polarization. Alloying InN mole fraction with GaN made it possible to generate the photo catalysis effect for visible light in III-V nitride film.
AB - We have studied the photo catalysis effect in III-V nitride film having the potential overall water splitting under UV- or visible light irradiation. It was found that the photo catalysis effect was greater on the surface of GaN film with Ga-face (+c) polarity than that with N-face (-c) polarity. This polarity dependence was discussed in term of band profile caused by the spontaneous polarization. Alloying InN mole fraction with GaN made it possible to generate the photo catalysis effect for visible light in III-V nitride film.
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U2 - 10.1002/pssc.200674886
DO - 10.1002/pssc.200674886
M3 - Conference article
AN - SCOPUS:49749101649
SN - 1862-6351
VL - 4
SP - 2642
EP - 2645
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 7
T2 - International Workshop on Nitride Semiconductors, IWN 2006
Y2 - 22 October 2006 through 27 October 2006
ER -
