Photo detection characteristics of Si/Si1-xGex/Si p-i-n diodes integrated with optical waveguides

Atsushi Yamada; Masao Sakuraba; Junichi Murota

doi:10.1016/j.tsf.2005.06.111

Photo detection characteristics of Si/Si_1-xGe_x/Si p-i-n diodes integrated with optical waveguides

Atsushi Yamada, Masao Sakuraba, Junichi Murota

RIEC - Computing System Platforms Division

Tohoku University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Integration of Si/Si_1-xGe_x/Si and Si p-i-n diodes with Si nitride optical waveguide on silicon-on-insulator (SOI) substrates has been achieved. For light emission from Si p-i-n diode, photo current of Si/Si_1-xGe_x/Si p-i-n diode is larger than that of Si p-i-n diode, and increases with increasing Si_1-xGe_x layer thickness and Ge fraction. From the relationship between photo current and effective electroluminescence intensity, it is suggested that the enhancement of photo current due to the Si_1-xGe_x layer is caused not only by the narrowing of bandgap but also by the increase of photoelectric conversion efficiency.

Original language	English
Pages (from-to)	399-401
Number of pages	3
Journal	Thin Solid Films
Volume	508
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.06.111
Publication status	Published - 2006 Jun 5

Keywords

Germanium
Light-Emitting-Diode
Optoelectronic devices
Photo detector
Silicon

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10.1016/j.tsf.2005.06.111

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title = "Photo detection characteristics of Si/Si1-xGex/Si p-i-n diodes integrated with optical waveguides",

abstract = "Integration of Si/Si1-xGex/Si and Si p-i-n diodes with Si nitride optical waveguide on silicon-on-insulator (SOI) substrates has been achieved. For light emission from Si p-i-n diode, photo current of Si/Si1-xGex/Si p-i-n diode is larger than that of Si p-i-n diode, and increases with increasing Si1-xGex layer thickness and Ge fraction. From the relationship between photo current and effective electroluminescence intensity, it is suggested that the enhancement of photo current due to the Si1-xGex layer is caused not only by the narrowing of bandgap but also by the increase of photoelectric conversion efficiency.",

keywords = "Germanium, Light-Emitting-Diode, Optoelectronic devices, Photo detector, Silicon",

author = "Atsushi Yamada and Masao Sakuraba and Junichi Murota",

year = "2006",

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doi = "10.1016/j.tsf.2005.06.111",

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journal = "Thin Solid Films",

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T1 - Photo detection characteristics of Si/Si1-xGex/Si p-i-n diodes integrated with optical waveguides

AU - Yamada, Atsushi

AU - Sakuraba, Masao

AU - Murota, Junichi

PY - 2006/6/5

Y1 - 2006/6/5

N2 - Integration of Si/Si1-xGex/Si and Si p-i-n diodes with Si nitride optical waveguide on silicon-on-insulator (SOI) substrates has been achieved. For light emission from Si p-i-n diode, photo current of Si/Si1-xGex/Si p-i-n diode is larger than that of Si p-i-n diode, and increases with increasing Si1-xGex layer thickness and Ge fraction. From the relationship between photo current and effective electroluminescence intensity, it is suggested that the enhancement of photo current due to the Si1-xGex layer is caused not only by the narrowing of bandgap but also by the increase of photoelectric conversion efficiency.

AB - Integration of Si/Si1-xGex/Si and Si p-i-n diodes with Si nitride optical waveguide on silicon-on-insulator (SOI) substrates has been achieved. For light emission from Si p-i-n diode, photo current of Si/Si1-xGex/Si p-i-n diode is larger than that of Si p-i-n diode, and increases with increasing Si1-xGex layer thickness and Ge fraction. From the relationship between photo current and effective electroluminescence intensity, it is suggested that the enhancement of photo current due to the Si1-xGex layer is caused not only by the narrowing of bandgap but also by the increase of photoelectric conversion efficiency.

KW - Germanium

KW - Light-Emitting-Diode

KW - Optoelectronic devices

KW - Photo detector

KW - Silicon

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Photo detection characteristics of Si/Si_1-xGe_x/Si p-i-n diodes integrated with optical waveguides

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Keywords

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