TY - JOUR
T1 - Photo-electrochemical properties of multi-layered thin films composed of chalcogenide and superionic conductor glasses
AU - Kawamura, J.
AU - Iriyama, J.
AU - Nakamura, Y.
N1 - Funding Information:
The authors would like to express their gratitude to Prof. K. Tanaka of Hokkaido University and Dr. M. Aniya of Kumamoto University for their helpful discussion. This work was partly supported by a Research Grant of the Iwatani Naoji Memorial Foundation and the Foundation for Promotion of Material Science and Technology of Japan.
PY - 1996/9
Y1 - 1996/9
N2 - Multi-layered thin films, which consisted of metallic silver, GeSe3 glass, and silver oxyhalide superionic conductor glass were prepared. Photo-and electrochemical reaction of metallic silver with the chalcogenide glass layer was studied by optical absorbance and cyclic-voltammetry. Photo-doping of silver through the superionic glass layer was observed using evaporated AgI-Ag2MoO4 film and it was partly undoped by electrochemical treatment. However, no photo-doping was observed for the cell consisting of a AgI-AgPO3 dip-coated layer. The doped silver was dissolved into the GeSe3 layer during the photo-doping process. However, it formed another intermediate compound layer (probably silver selenide) during the electrodoping process.
AB - Multi-layered thin films, which consisted of metallic silver, GeSe3 glass, and silver oxyhalide superionic conductor glass were prepared. Photo-and electrochemical reaction of metallic silver with the chalcogenide glass layer was studied by optical absorbance and cyclic-voltammetry. Photo-doping of silver through the superionic glass layer was observed using evaporated AgI-Ag2MoO4 film and it was partly undoped by electrochemical treatment. However, no photo-doping was observed for the cell consisting of a AgI-AgPO3 dip-coated layer. The doped silver was dissolved into the GeSe3 layer during the photo-doping process. However, it formed another intermediate compound layer (probably silver selenide) during the electrodoping process.
KW - Chalcogenide glass
KW - Germanium selenide
KW - Multi-layered thin films
KW - Photo-doping of silver
KW - Superionic conductor glass
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U2 - 10.1016/s0167-2738(96)00394-3
DO - 10.1016/s0167-2738(96)00394-3
M3 - Article
AN - SCOPUS:0030233862
SN - 0167-2738
VL - 90
SP - 303
EP - 306
JO - Solid State Ionics
JF - Solid State Ionics
IS - 1-4
ER -