Photo-induced phenomena in sputtered GeO2 films

Nobuaki Terakado, Keiji Tanaka

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


Macroscopic and microscopic changes in sputtered GeO2 films induced by band-gap light from an ArF excimer laser have been studied. When irradiated at 1 atm, the film thickness increases, surface-roughness increases, refractive-index decreases, hygroscopic enhancements, and Ge-O-Ge distance increases. Irradiations in vacuum make these changes smaller or undetectable. These photo-induced changes are discussed from phenomenological and structural viewpoints, and compared with characteristics in GeO2-SiO2 and GeS2 films.

Original languageEnglish
Pages (from-to)54-60
Number of pages7
JournalJournal of Non-Crystalline Solids
Issue number1
Publication statusPublished - 2005


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