Photocapacitance investigation of stoichiometry-dependent deep levels in InP

Y. Oyama; J. Nishizawa; K. Kim; K. Suto

doi:10.1109/ISCS.1998.711640

Photocapacitance investigation of stoichiometry-dependent deep levels in InP

Y. Oyama, J. Nishizawa, K. Kim, K. Suto

ENG - Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The photocapacitance measurements under constant capacitance condition is applied to n- A nd p-type InP crystals prepared by 4h-annealing at 700°C under controlled phosphorus vapor pressure. Samples used are InP bulk crystals grown by the conventional LEC method. Vapour pressure controlled-zone melting grown InP and LPE-grown InP are also investigated. The phosphorus vapor pressure dependence of the deep level density is shown. And the excitation photocapacitance method is also applied to show the precise optical transition mechanism of these deep levels. From these results the defect formation mechanism is discussed in view of the deviation from the stoichiometric composition of InP.

Original language	English
Title of host publication	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
Editors	Mike Melloch, Mark A. Reed
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	299-302
Number of pages	4
ISBN (Print)	0780338839, 9780780338838
DOIs	https://doi.org/10.1109/ISCS.1998.711640
Publication status	Published - 1997
Event	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States Duration: 1997 Sept 8 → 1997 Sept 11

Publication series

Name	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Other

Other	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
Country/Territory	United States
City	San Diego
Period	97/9/8 → 97/9/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCS.1998.711640

Cite this

Oyama, Y., Nishizawa, J., Kim, K., & Suto, K. (1997). Photocapacitance investigation of stoichiometry-dependent deep levels in InP. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 299-302). [711640] (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711640

Photocapacitance investigation of stoichiometry-dependent deep levels in InP. / Oyama, Y.; Nishizawa, J.; Kim, K. et al.
Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. ed. / Mike Melloch; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. p. 299-302 711640 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Oyama, Y, Nishizawa, J, Kim, K & Suto, K 1997, Photocapacitance investigation of stoichiometry-dependent deep levels in InP. in M Melloch & MA Reed (eds), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997., 711640, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, Institute of Electrical and Electronics Engineers Inc., pp. 299-302, 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997, San Diego, United States, 97/9/8. https://doi.org/10.1109/ISCS.1998.711640

Oyama Y, Nishizawa J, Kim K, Suto K. Photocapacitance investigation of stoichiometry-dependent deep levels in InP. In Melloch M, Reed MA, editors, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. Institute of Electrical and Electronics Engineers Inc. 1997. p. 299-302. 711640. (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). doi: 10.1109/ISCS.1998.711640

Oyama, Y. ; Nishizawa, J. ; Kim, K. et al. / Photocapacitance investigation of stoichiometry-dependent deep levels in InP. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. editor / Mike Melloch ; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. pp. 299-302 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

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abstract = "The photocapacitance measurements under constant capacitance condition is applied to n- A nd p-type InP crystals prepared by 4h-annealing at 700°C under controlled phosphorus vapor pressure. Samples used are InP bulk crystals grown by the conventional LEC method. Vapour pressure controlled-zone melting grown InP and LPE-grown InP are also investigated. The phosphorus vapor pressure dependence of the deep level density is shown. And the excitation photocapacitance method is also applied to show the precise optical transition mechanism of these deep levels. From these results the defect formation mechanism is discussed in view of the deviation from the stoichiometric composition of InP.",

author = "Y. Oyama and J. Nishizawa and K. Kim and K. Suto",

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N2 - The photocapacitance measurements under constant capacitance condition is applied to n- A nd p-type InP crystals prepared by 4h-annealing at 700°C under controlled phosphorus vapor pressure. Samples used are InP bulk crystals grown by the conventional LEC method. Vapour pressure controlled-zone melting grown InP and LPE-grown InP are also investigated. The phosphorus vapor pressure dependence of the deep level density is shown. And the excitation photocapacitance method is also applied to show the precise optical transition mechanism of these deep levels. From these results the defect formation mechanism is discussed in view of the deviation from the stoichiometric composition of InP.

AB - The photocapacitance measurements under constant capacitance condition is applied to n- A nd p-type InP crystals prepared by 4h-annealing at 700°C under controlled phosphorus vapor pressure. Samples used are InP bulk crystals grown by the conventional LEC method. Vapour pressure controlled-zone melting grown InP and LPE-grown InP are also investigated. The phosphorus vapor pressure dependence of the deep level density is shown. And the excitation photocapacitance method is also applied to show the precise optical transition mechanism of these deep levels. From these results the defect formation mechanism is discussed in view of the deviation from the stoichiometric composition of InP.

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Photocapacitance investigation of stoichiometry-dependent deep levels in InP

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