Photocapacitance (PHCAP) measurements are applied to liquid-phase epitaxially grown n-Al0.3Ga0.7As crystals at different temperatures. The PHCAP measurements revealed deep levels optically located at 0.5 eV below the conduction band and 1.5 eV above the valence band [Ec -0.5 eV level (Te-related DX center) and Ec + 1.5 eV level]. The thermal activation energy of electron capture at the ionized Ec-0.5 eV level was found to be 31 meV. The optical hole emission process from the Ec + 1.5 eV level was enhanced with increasing sample temperature. After 1.5 eV monochromatic light preirradiation, the Ec - 0.5 eV level was detected in an intentionallly undoped n-Al0.3Ga0.7As sample. From these results, the structure of the Te-related DX center is discussed.
|Number of pages||5|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2000 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)