Photocapacitive detection of hole emission from DX center in si-type Al0.3Ga0.7As doped with Te

Akihiko Murai; Yutaka Oyama; Jun Ichi Nishizawa

doi:10.1063/1.371848

Photocapacitive detection of hole emission from DX center in si-type Al_0.3Ga_0.7As doped with Te

Akihiko Murai, Yutaka Oyama, Jun Ichi Nishizawa

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Photocapacitance (PHCAP) measurements are applied to liquid-phase epitaxially grown n-Al_0.3Ga_0.7As crystals at different temperatures. The PHCAP measurements revealed deep levels optically located at 0.5 eV below the conduction band and 1.5 eV above the valence band [E_c -0.5 eV level (Te-related DX center) and E_c + 1.5 eV level]. The thermal activation energy of electron capture at the ionized E_c-0.5 eV level was found to be 31 meV. The optical hole emission process from the E_c + 1.5 eV level was enhanced with increasing sample temperature. After 1.5 eV monochromatic light preirradiation, the E_c - 0.5 eV level was detected in an intentionallly undoped n-Al_0.3Ga_0.7As sample. From these results, the structure of the Te-related DX center is discussed.

Original language	English
Pages (from-to)	223-227
Number of pages	5
Journal	Journal of Applied Physics
Volume	87
Issue number	1
DOIs	https://doi.org/10.1063/1.371848
Publication status	Published - 2000 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Photocapacitive detection of hole emission from DX center in si-type Al0.3Ga0.7As doped with Te",

abstract = "Photocapacitance (PHCAP) measurements are applied to liquid-phase epitaxially grown n-Al0.3Ga0.7As crystals at different temperatures. The PHCAP measurements revealed deep levels optically located at 0.5 eV below the conduction band and 1.5 eV above the valence band [Ec -0.5 eV level (Te-related DX center) and Ec + 1.5 eV level]. The thermal activation energy of electron capture at the ionized Ec-0.5 eV level was found to be 31 meV. The optical hole emission process from the Ec + 1.5 eV level was enhanced with increasing sample temperature. After 1.5 eV monochromatic light preirradiation, the Ec - 0.5 eV level was detected in an intentionallly undoped n-Al0.3Ga0.7As sample. From these results, the structure of the Te-related DX center is discussed.",

author = "Akihiko Murai and Yutaka Oyama and Nishizawa, {Jun Ichi}",

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T1 - Photocapacitive detection of hole emission from DX center in si-type Al0.3Ga0.7As doped with Te

AU - Murai, Akihiko

AU - Oyama, Yutaka

AU - Nishizawa, Jun Ichi

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Photocapacitance (PHCAP) measurements are applied to liquid-phase epitaxially grown n-Al0.3Ga0.7As crystals at different temperatures. The PHCAP measurements revealed deep levels optically located at 0.5 eV below the conduction band and 1.5 eV above the valence band [Ec -0.5 eV level (Te-related DX center) and Ec + 1.5 eV level]. The thermal activation energy of electron capture at the ionized Ec-0.5 eV level was found to be 31 meV. The optical hole emission process from the Ec + 1.5 eV level was enhanced with increasing sample temperature. After 1.5 eV monochromatic light preirradiation, the Ec - 0.5 eV level was detected in an intentionallly undoped n-Al0.3Ga0.7As sample. From these results, the structure of the Te-related DX center is discussed.

AB - Photocapacitance (PHCAP) measurements are applied to liquid-phase epitaxially grown n-Al0.3Ga0.7As crystals at different temperatures. The PHCAP measurements revealed deep levels optically located at 0.5 eV below the conduction band and 1.5 eV above the valence band [Ec -0.5 eV level (Te-related DX center) and Ec + 1.5 eV level]. The thermal activation energy of electron capture at the ionized Ec-0.5 eV level was found to be 31 meV. The optical hole emission process from the Ec + 1.5 eV level was enhanced with increasing sample temperature. After 1.5 eV monochromatic light preirradiation, the Ec - 0.5 eV level was detected in an intentionallly undoped n-Al0.3Ga0.7As sample. From these results, the structure of the Te-related DX center is discussed.

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Photocapacitive detection of hole emission from DX center in si-type Al_0.3Ga_0.7As doped with Te

Abstract

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