Photoelectron diffraction study of the Si(001)c(4×4)-C surface

R. Kosugi, T. Abukawa, M. Shimomura, S. Sumitani, H. W. Yeom, T. Hanano, K. Tono, S. Suzuki, S. Sato, T. Ohta, S. Kono, Y. Takakuwa

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X-ray photoelectron diffraction (XPD) and synchrotron radiation photoelectron diffraction (SRPD) have been applied to a Si(001)c(4×4)-C surface in order to determine the site of carbon atoms on the surface. The c(4×4)-C surface, which typically appears during the incubation time of carbonization of Si, was prepared by exposing a single-domain Si(001)2×1 surface at 680°C to C2H4 of 1×10-6 mbar for 600 s. XPD revealed that, except for carbon atoms on the topmost layer, carbon atoms occupy the substitutional sites of Si up to the fourth layer and form a Si1-xCx (x≠0.5) alloy layer. SRPD with a resolution of the chemical-shift C 1s components revealed that the carbon atoms present on the topmost layer occupy random sites and thus are not essential elements of the c(4×4) periodicity.

Original languageEnglish
Pages (from-to)239-243
Number of pages5
JournalJournal of Electron Spectroscopy and Related Phenomena
Publication statusPublished - 1999


  • CH
  • Carbonization
  • Initial stage 3C-SiC growth
  • Si(001)c(4×4)-C surface
  • Surface alloy
  • Synchrotron radiation
  • X-ray photoelectron diffraction


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