TY - JOUR
T1 - Photoelectron diffraction study of the Si(001)c(4×4)-C surface
AU - Kosugi, R.
AU - Abukawa, T.
AU - Shimomura, M.
AU - Sumitani, S.
AU - Yeom, H. W.
AU - Hanano, T.
AU - Tono, K.
AU - Suzuki, S.
AU - Sato, S.
AU - Ohta, T.
AU - Kono, S.
AU - Takakuwa, Y.
N1 - Funding Information:
The authors are grateful to Dr. K. Sakamoto and Dr. T. Sakamoto of the Electrotechnical Laboratory for providing the well-oriented Si(001) wafers used in this study. This study was performed under the approval of the Photon Factory Program Advisory Committee (Proposal No. 97G297). This work is partly supported by a Grant-in-Aid for Creative Basic Research, #09NP1201, and the Research for the Future Program of JSPS, #RFTF96R15401.
PY - 1999
Y1 - 1999
N2 - X-ray photoelectron diffraction (XPD) and synchrotron radiation photoelectron diffraction (SRPD) have been applied to a Si(001)c(4×4)-C surface in order to determine the site of carbon atoms on the surface. The c(4×4)-C surface, which typically appears during the incubation time of carbonization of Si, was prepared by exposing a single-domain Si(001)2×1 surface at 680°C to C2H4 of 1×10-6 mbar for 600 s. XPD revealed that, except for carbon atoms on the topmost layer, carbon atoms occupy the substitutional sites of Si up to the fourth layer and form a Si1-xCx (x≠0.5) alloy layer. SRPD with a resolution of the chemical-shift C 1s components revealed that the carbon atoms present on the topmost layer occupy random sites and thus are not essential elements of the c(4×4) periodicity.
AB - X-ray photoelectron diffraction (XPD) and synchrotron radiation photoelectron diffraction (SRPD) have been applied to a Si(001)c(4×4)-C surface in order to determine the site of carbon atoms on the surface. The c(4×4)-C surface, which typically appears during the incubation time of carbonization of Si, was prepared by exposing a single-domain Si(001)2×1 surface at 680°C to C2H4 of 1×10-6 mbar for 600 s. XPD revealed that, except for carbon atoms on the topmost layer, carbon atoms occupy the substitutional sites of Si up to the fourth layer and form a Si1-xCx (x≠0.5) alloy layer. SRPD with a resolution of the chemical-shift C 1s components revealed that the carbon atoms present on the topmost layer occupy random sites and thus are not essential elements of the c(4×4) periodicity.
KW - CH
KW - Carbonization
KW - Initial stage 3C-SiC growth
KW - Si(001)c(4×4)-C surface
KW - Surface alloy
KW - Synchrotron radiation
KW - X-ray photoelectron diffraction
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U2 - 10.1016/s0368-2048(98)00452-6
DO - 10.1016/s0368-2048(98)00452-6
M3 - Article
AN - SCOPUS:0004390991
SN - 0368-2048
VL - 101-103
SP - 239
EP - 243
JO - Journal of Electron Spectroscopy and Related Phenomena
JF - Journal of Electron Spectroscopy and Related Phenomena
ER -