Photoelectron intensity oscillation during chemical vapor deposition on Si(100) surface with Si2H6

Yuji Takakuwa; Yoshiharu Enta; Tetsuji Yamaguchi; Toyokazu Hori; Michio Niwano; Nobuo Miyamoto; Hiroyuki Ishida; Hitoshi Sakamoto; Toshihiko Nishimori; Hiroo Kato

doi:10.1063/1.111723

Photoelectron intensity oscillation during chemical vapor deposition on Si(100) surface with Si₂H₆

Yuji Takakuwa, Yoshiharu Enta, Tetsuji Yamaguchi, Toyokazu Hori, Michio Niwano, Nobuo Miyamoto, Hiroyuki Ishida, Hitoshi Sakamoto, Toshihiko Nishimori, Hiroo Kato

Micro System Integration Center (μSIC)

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We have found that the photoelectron intensity of the dimer-dangling-bond- derived surface state on Si(100) shows a periodic oscillation during chemical vapor deposition with Si₂H₆ gas. The substrate temperature and Si₂H₆-pressure dependence of the oscillation period was measured. By use of a selective-growth method using SiO₂- patterned wafers, one oscillation period was clarified to correspond to the Si growth of one atomic layer of the Si(100) plane with a thickness of 1.36 Å.

Original language	English
Pages (from-to)	2013-2015
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	15
DOIs	https://doi.org/10.1063/1.111723
Publication status	Published - 1994

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10.1063/1.111723

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title = "Photoelectron intensity oscillation during chemical vapor deposition on Si(100) surface with Si2H6",

abstract = "We have found that the photoelectron intensity of the dimer-dangling-bond- derived surface state on Si(100) shows a periodic oscillation during chemical vapor deposition with Si2H6 gas. The substrate temperature and Si2H6-pressure dependence of the oscillation period was measured. By use of a selective-growth method using SiO2- patterned wafers, one oscillation period was clarified to correspond to the Si growth of one atomic layer of the Si(100) plane with a thickness of 1.36 {\AA}.",

author = "Yuji Takakuwa and Yoshiharu Enta and Tetsuji Yamaguchi and Toyokazu Hori and Michio Niwano and Nobuo Miyamoto and Hiroyuki Ishida and Hitoshi Sakamoto and Toshihiko Nishimori and Hiroo Kato",

year = "1994",

doi = "10.1063/1.111723",

language = "English",

volume = "64",

pages = "2013--2015",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Photoelectron intensity oscillation during chemical vapor deposition on Si(100) surface with Si2H6

AU - Takakuwa, Yuji

AU - Enta, Yoshiharu

AU - Yamaguchi, Tetsuji

AU - Hori, Toyokazu

AU - Niwano, Michio

AU - Miyamoto, Nobuo

AU - Ishida, Hiroyuki

AU - Sakamoto, Hitoshi

AU - Nishimori, Toshihiko

AU - Kato, Hiroo

PY - 1994

Y1 - 1994

N2 - We have found that the photoelectron intensity of the dimer-dangling-bond- derived surface state on Si(100) shows a periodic oscillation during chemical vapor deposition with Si2H6 gas. The substrate temperature and Si2H6-pressure dependence of the oscillation period was measured. By use of a selective-growth method using SiO2- patterned wafers, one oscillation period was clarified to correspond to the Si growth of one atomic layer of the Si(100) plane with a thickness of 1.36 Å.

AB - We have found that the photoelectron intensity of the dimer-dangling-bond- derived surface state on Si(100) shows a periodic oscillation during chemical vapor deposition with Si2H6 gas. The substrate temperature and Si2H6-pressure dependence of the oscillation period was measured. By use of a selective-growth method using SiO2- patterned wafers, one oscillation period was clarified to correspond to the Si growth of one atomic layer of the Si(100) plane with a thickness of 1.36 Å.

UR - http://www.scopus.com/inward/record.url?scp=0028407744&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028407744&partnerID=8YFLogxK

U2 - 10.1063/1.111723

DO - 10.1063/1.111723

M3 - Article

AN - SCOPUS:0028407744

SN - 0003-6951

VL - 64

SP - 2013

EP - 2015

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Photoelectron intensity oscillation during chemical vapor deposition on Si(100) surface with Si₂H₆

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