Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals

Takahiro Nagata; Oliver Bierwagen; Zbigniew Galazka; Masataka Imura; Shigenori Ueda; Hideki Yoshikawa; Yoshiyuki Yamashita; Toyohiro Chikyow

doi:10.7567/APEX.10.011102

Photoelectron spectroscopic study of electronic state and surface structure of In₂O₃ single crystals

Takahiro Nagata, Oliver Bierwagen, Zbigniew Galazka, Masataka Imura, Shigenori Ueda, Hideki Yoshikawa, Yoshiyuki Yamashita, Toyohiro Chikyow

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The electronic states and band bending behavior of melt-grown In₂O₃ single crystals were investigated by combining surface-sensitive soft- and bulk-sensitive hard-X-ray photoelectron spectroscopies. The as-grown In₂O₃ crystal had a higher density of in-gap states related to oxygen vacancies than the In₂O₃ crystal annealed in air at 1000 °C. Nevertheless, the polished surfaces of both samples had surface electron accumulation layers (SEALs) with similar Fermi level pinning energies at the surface. The estimated peak carrier density at the surface of both samples was 1.2 ' 1020cm%3. The SEALs may originate from defects due to surface polishing or adsorbates.

Original language	English
Article number	011102
Journal	Applied Physics Express
Volume	10
Issue number	1
DOIs	https://doi.org/10.7567/APEX.10.011102
Publication status	Published - 2017 Jan
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals",

abstract = "The electronic states and band bending behavior of melt-grown In2O3 single crystals were investigated by combining surface-sensitive soft- and bulk-sensitive hard-X-ray photoelectron spectroscopies. The as-grown In2O3 crystal had a higher density of in-gap states related to oxygen vacancies than the In2O3 crystal annealed in air at 1000 °C. Nevertheless, the polished surfaces of both samples had surface electron accumulation layers (SEALs) with similar Fermi level pinning energies at the surface. The estimated peak carrier density at the surface of both samples was 1.2 ' 1020cm%3. The SEALs may originate from defects due to surface polishing or adsorbates.",

author = "Takahiro Nagata and Oliver Bierwagen and Zbigniew Galazka and Masataka Imura and Shigenori Ueda and Hideki Yoshikawa and Yoshiyuki Yamashita and Toyohiro Chikyow",

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T1 - Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals

AU - Nagata, Takahiro

AU - Bierwagen, Oliver

AU - Galazka, Zbigniew

AU - Imura, Masataka

AU - Ueda, Shigenori

AU - Yoshikawa, Hideki

AU - Yamashita, Yoshiyuki

AU - Chikyow, Toyohiro

PY - 2017/1

Y1 - 2017/1

N2 - The electronic states and band bending behavior of melt-grown In2O3 single crystals were investigated by combining surface-sensitive soft- and bulk-sensitive hard-X-ray photoelectron spectroscopies. The as-grown In2O3 crystal had a higher density of in-gap states related to oxygen vacancies than the In2O3 crystal annealed in air at 1000 °C. Nevertheless, the polished surfaces of both samples had surface electron accumulation layers (SEALs) with similar Fermi level pinning energies at the surface. The estimated peak carrier density at the surface of both samples was 1.2 ' 1020cm%3. The SEALs may originate from defects due to surface polishing or adsorbates.

AB - The electronic states and band bending behavior of melt-grown In2O3 single crystals were investigated by combining surface-sensitive soft- and bulk-sensitive hard-X-ray photoelectron spectroscopies. The as-grown In2O3 crystal had a higher density of in-gap states related to oxygen vacancies than the In2O3 crystal annealed in air at 1000 °C. Nevertheless, the polished surfaces of both samples had surface electron accumulation layers (SEALs) with similar Fermi level pinning energies at the surface. The estimated peak carrier density at the surface of both samples was 1.2 ' 1020cm%3. The SEALs may originate from defects due to surface polishing or adsorbates.

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Photoelectron spectroscopic study of electronic state and surface structure of In₂O₃ single crystals

Abstract

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