Photoemission study of the Kondo insulator Ce3Bi4Pt3

K. Breuer, S. Messerli, D. Purdie, M. Garnier, M. Hengsberger, G. Panaccione, Y. Baer, T. Takahashi, S. Yoshii, M. Kasaya, K. Katoh, T. Takabatake

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


The electronic structure of the Kondo insulator Ce3Bi4Pt3 has been studied by high-resolution photoelectron spectroscopy. Indications of the unusual electronic structure are observed: the 4f derived peak near the Fermi level is located at a binding energy of 20 meV and is not cut-off by the Fermi edge as in conventional Kondo systems; for low photon energies, where the 4f contribution is negligible and the conduction band states are probed, a loss of spectral intensity in the same energy range is observed. These observations are related to the opening of a gap at low temperature, confirming the picture that hybridisation between a localised 4f state and the conduction band is responsible for the insulating character of this material.

Original languageEnglish
Pages (from-to)565-570
Number of pages6
JournalEurophysics Letters
Issue number5
Publication statusPublished - 1998 Mar 1


Dive into the research topics of 'Photoemission study of the Kondo insulator Ce3Bi4Pt3'. Together they form a unique fingerprint.

Cite this