Photoemission study on interfacial reaction of Ti/n-type GaN

T. Naono, J. Okabayashi, S. Toyoda, H. Fujioka, M. Oshima, H. Hamamatsu

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


In order to understand the mechanism of ohmic-contact formation by the annealing of Ti electrodes on n-type GaN, we have investigated the changes in the energy-band structure of Ti/n-type GaN depending on annealing temperature using photoemission spectroscopy. Valence-band spectrum for an as-deposited sample was explained by the simple summation of Ti and GaN spectra. Spectral line shapes significantly changed by annealing at 500 and 700°C, suggesting the formation of a TiN layer. The peak shifts of Ga 3d and N 1s core levels are interpreted as the energy-band bending and interfacial reaction with the formation of the TiN layer. It is revealed that the ohmic-contact formation by the annealing is attributed to the formation of GaN with nitrogen vacancies, which is consistent with the current-voltage characteristics.

Original languageEnglish
Pages (from-to)277-280
Number of pages4
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2005 May 15
Externally publishedYes
Event12th International Conference on Solid Films and Surfaces - Hammatsu, Japan
Duration: 2004 Jun 212004 Jun 25


  • Interfacial reaction
  • Ohmic contact
  • Photoemission spectroscopy
  • Ti/n-type GaN

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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