Photoemission study on interfacial reaction of Ti/n-type GaN

T. Naono; J. Okabayashi; S. Toyoda; H. Fujioka; M. Oshima; H. Hamamatsu

doi:10.1016/j.apsusc.2004.10.132

Photoemission study on interfacial reaction of Ti/n-type GaN

T. Naono, J. Okabayashi, S. Toyoda, H. Fujioka, M. Oshima, H. Hamamatsu

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

In order to understand the mechanism of ohmic-contact formation by the annealing of Ti electrodes on n-type GaN, we have investigated the changes in the energy-band structure of Ti/n-type GaN depending on annealing temperature using photoemission spectroscopy. Valence-band spectrum for an as-deposited sample was explained by the simple summation of Ti and GaN spectra. Spectral line shapes significantly changed by annealing at 500 and 700°C, suggesting the formation of a TiN layer. The peak shifts of Ga 3d and N 1s core levels are interpreted as the energy-band bending and interfacial reaction with the formation of the TiN layer. It is revealed that the ohmic-contact formation by the annealing is attributed to the formation of GaN with nitrogen vacancies, which is consistent with the current-voltage characteristics.

Original language	English
Pages (from-to)	277-280
Number of pages	4
Journal	Applied Surface Science
Volume	244
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.10.132
Publication status	Published - 2005 May 15
Externally published	Yes
Event	12th International Conference on Solid Films and Surfaces - Hammatsu, Japan Duration: 2004 Jun 21 → 2004 Jun 25

Keywords

Interfacial reaction
Ohmic contact
Photoemission spectroscopy
Ti/n-type GaN

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2004.10.132

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title = "Photoemission study on interfacial reaction of Ti/n-type GaN",

abstract = "In order to understand the mechanism of ohmic-contact formation by the annealing of Ti electrodes on n-type GaN, we have investigated the changes in the energy-band structure of Ti/n-type GaN depending on annealing temperature using photoemission spectroscopy. Valence-band spectrum for an as-deposited sample was explained by the simple summation of Ti and GaN spectra. Spectral line shapes significantly changed by annealing at 500 and 700°C, suggesting the formation of a TiN layer. The peak shifts of Ga 3d and N 1s core levels are interpreted as the energy-band bending and interfacial reaction with the formation of the TiN layer. It is revealed that the ohmic-contact formation by the annealing is attributed to the formation of GaN with nitrogen vacancies, which is consistent with the current-voltage characteristics.",

keywords = "Interfacial reaction, Ohmic contact, Photoemission spectroscopy, Ti/n-type GaN",

author = "T. Naono and J. Okabayashi and S. Toyoda and H. Fujioka and M. Oshima and H. Hamamatsu",

year = "2005",

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doi = "10.1016/j.apsusc.2004.10.132",

language = "English",

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journal = "Applied Surface Science",

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TY - JOUR

T1 - Photoemission study on interfacial reaction of Ti/n-type GaN

AU - Naono, T.

AU - Okabayashi, J.

AU - Toyoda, S.

AU - Fujioka, H.

AU - Oshima, M.

AU - Hamamatsu, H.

PY - 2005/5/15

Y1 - 2005/5/15

N2 - In order to understand the mechanism of ohmic-contact formation by the annealing of Ti electrodes on n-type GaN, we have investigated the changes in the energy-band structure of Ti/n-type GaN depending on annealing temperature using photoemission spectroscopy. Valence-band spectrum for an as-deposited sample was explained by the simple summation of Ti and GaN spectra. Spectral line shapes significantly changed by annealing at 500 and 700°C, suggesting the formation of a TiN layer. The peak shifts of Ga 3d and N 1s core levels are interpreted as the energy-band bending and interfacial reaction with the formation of the TiN layer. It is revealed that the ohmic-contact formation by the annealing is attributed to the formation of GaN with nitrogen vacancies, which is consistent with the current-voltage characteristics.

AB - In order to understand the mechanism of ohmic-contact formation by the annealing of Ti electrodes on n-type GaN, we have investigated the changes in the energy-band structure of Ti/n-type GaN depending on annealing temperature using photoemission spectroscopy. Valence-band spectrum for an as-deposited sample was explained by the simple summation of Ti and GaN spectra. Spectral line shapes significantly changed by annealing at 500 and 700°C, suggesting the formation of a TiN layer. The peak shifts of Ga 3d and N 1s core levels are interpreted as the energy-band bending and interfacial reaction with the formation of the TiN layer. It is revealed that the ohmic-contact formation by the annealing is attributed to the formation of GaN with nitrogen vacancies, which is consistent with the current-voltage characteristics.

KW - Interfacial reaction

KW - Ohmic contact

KW - Photoemission spectroscopy

KW - Ti/n-type GaN

UR - http://www.scopus.com/inward/record.url?scp=15844366620&partnerID=8YFLogxK

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U2 - 10.1016/j.apsusc.2004.10.132

DO - 10.1016/j.apsusc.2004.10.132

M3 - Conference article

AN - SCOPUS:15844366620

SN - 0169-4332

VL - 244

SP - 277

EP - 280

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

T2 - 12th International Conference on Solid Films and Surfaces

Y2 - 21 June 2004 through 25 June 2004

ER -

Photoemission study on interfacial reaction of Ti/n-type GaN

Abstract

Keywords

ASJC Scopus subject areas

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