TY - JOUR
T1 - Photoemission (UPS and XPS) study of crystallization of amorphous GeTe film
AU - Takahashi, T.
AU - Sakurai, H.
AU - Sagawa, T.
N1 - Funding Information:
Acknowledgements - The authors wish to thank Prof. Shiraishi, Tokai University, for supplying bulk GeTe sample. One of the authors (T.T.) acknowledges the financial support from The Sakkokai Foundation.
PY - 1982/11
Y1 - 1982/11
N2 - In situ photoemission (UPS and XPS) measurements have been performed for amorphous GeTe films. The photoemission spectra exhibit a drastic change upon thermal annealing and/or the crystallization of the film. It has been found that an amorphous GeTe film deposited onto a room temperature substrate has a 4-2 coordinated local structure, while a highly disordered amorphous GeTe film evaporated onto a cooled (77 K) substrate is largely 3-3 coordinated, and relaxes into the 4-2 coordinated structure upon thermal annealing within amorphous phase.
AB - In situ photoemission (UPS and XPS) measurements have been performed for amorphous GeTe films. The photoemission spectra exhibit a drastic change upon thermal annealing and/or the crystallization of the film. It has been found that an amorphous GeTe film deposited onto a room temperature substrate has a 4-2 coordinated local structure, while a highly disordered amorphous GeTe film evaporated onto a cooled (77 K) substrate is largely 3-3 coordinated, and relaxes into the 4-2 coordinated structure upon thermal annealing within amorphous phase.
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U2 - 10.1016/0038-1098(82)90592-0
DO - 10.1016/0038-1098(82)90592-0
M3 - Article
AN - SCOPUS:0020208823
SN - 0038-1098
VL - 44
SP - 723
EP - 726
JO - Solid State Communications
JF - Solid State Communications
IS - 5
ER -