Photoinduced high-quality ultrathin SiO2 film from hybrid nanosheet at room temperature

Yeji Kim; Feng Zhao; Masaya Mitsuishi; Akira Watanabe; Tokuji Miyashita

doi:10.1021/ja803852w

Photoinduced high-quality ultrathin SiO₂ film from hybrid nanosheet at room temperature

Yeji Kim, Feng Zhao, Masaya Mitsuishi, Akira Watanabe, Tokuji Miyashita

ENG - Applied Chemistry

Tohoku University

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

The paper describes a flexible approach to building up high-quality ultrathin SiO₂ films under deep UV light irradiation at room temperature. The ultrathin hybrid nanosheet possessing polyoctahedral silsesquioxane (POSS) has been designed to prepare densely packed ultrathin POSS films by the Langmuir-Blodgett (LB) technique. The LB technique enables POSS to have a multilayered structure with nanoscale precision. The films- hardness and modulus changed considerably from 0.1 and 2.6 GPa to 1.7 and 32.2 GPa, respectively, after deep UV light irradiation. Subsequent FTIR measurements revealed that the organic components were removed completely and that the POSS cage structure turned to an Si-O-Si network structure. X-ray photon spectroscopy also confirmed high-quality SiO₂ formation with no suboxides.

Original language	English
Pages (from-to)	11848-11849
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	130
Issue number	36
DOIs	https://doi.org/10.1021/ja803852w
Publication status	Published - 2008 Sept 10

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abstract = "The paper describes a flexible approach to building up high-quality ultrathin SiO2 films under deep UV light irradiation at room temperature. The ultrathin hybrid nanosheet possessing polyoctahedral silsesquioxane (POSS) has been designed to prepare densely packed ultrathin POSS films by the Langmuir-Blodgett (LB) technique. The LB technique enables POSS to have a multilayered structure with nanoscale precision. The films- hardness and modulus changed considerably from 0.1 and 2.6 GPa to 1.7 and 32.2 GPa, respectively, after deep UV light irradiation. Subsequent FTIR measurements revealed that the organic components were removed completely and that the POSS cage structure turned to an Si-O-Si network structure. X-ray photon spectroscopy also confirmed high-quality SiO2 formation with no suboxides.",

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AU - Kim, Yeji

AU - Zhao, Feng

AU - Mitsuishi, Masaya

AU - Watanabe, Akira

AU - Miyashita, Tokuji

PY - 2008/9/10

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Photoinduced high-quality ultrathin SiO₂ film from hybrid nanosheet at room temperature

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