TY - JOUR
T1 - Photoinduced stress in a ZnSeGaAs epilayer containing 90°α partial dislocations
AU - Ohno, Yutaka
N1 - Funding Information:
This work was partially supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Young Scientist (A)(2) No. 15681006, 2003–2005. The author is indebted to Professor S. Takeda for use of the facilities and for his constructive comments and discussion.
PY - 2005/10/31
Y1 - 2005/10/31
N2 - Photoinduced stress in a ZnSeGaAs epilayer containing 90°α partial dislocations was observed in situ by means of polarized cathodoluminescence spectroscopy under light illumination in a transmission electron microscope. A dislocation glided under the illumination of a monochromatic light whose photon energy was above 2.07-2.40 eV, presumably due to a recombination-enhanced effect. The glide accompanied with a variation of the compression stress along [110] in the epilayer; the stress decreased at the temperature of 35 K, while it increased at higher temperatures.
AB - Photoinduced stress in a ZnSeGaAs epilayer containing 90°α partial dislocations was observed in situ by means of polarized cathodoluminescence spectroscopy under light illumination in a transmission electron microscope. A dislocation glided under the illumination of a monochromatic light whose photon energy was above 2.07-2.40 eV, presumably due to a recombination-enhanced effect. The glide accompanied with a variation of the compression stress along [110] in the epilayer; the stress decreased at the temperature of 35 K, while it increased at higher temperatures.
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U2 - 10.1063/1.2123392
DO - 10.1063/1.2123392
M3 - Article
AN - SCOPUS:27344444834
SN - 0003-6951
VL - 87
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 18
M1 - 181909
ER -