Photoionization of small silicon clusters: ionization potentials for Si2 to Si40

K. Fuke; K. Tsukamoto; F. Misaizu

doi:10.1007/BF01425665

Photoionization of small silicon clusters: ionization potentials for Si₂ to Si₄₀

K. Fuke, K. Tsukamoto, F. Misaizu

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Photoionization thresholds of Si_n (n=2-40) were examined by vacuum UV radiation (5.7-8.5 eV) generated by stimulated Raman scattering of narrow-bandwidth 193-nm radiation in high pressure hydrogen and deuterium gases. A strong threshold energy dependence on cluster size is observed, featuring major maxima at 10 and 20. The magic behavior at n=10 is consistent with the results of the photofragmentation and CID experiments reported previously.

Original language	English
Pages (from-to)	204-206
Number of pages	3
Journal	Zeitschrift für Physik D Atoms, Molecules and Clusters
Volume	26
Issue number	1 Supplement
DOIs	https://doi.org/10.1007/BF01425665
Publication status	Published - 1993 Mar 1
Externally published	Yes

Keywords

34.50.Lf
36.40.+d

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1007/BF01425665

Cite this

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AU - Misaizu, F.

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AB - Photoionization thresholds of Sin (n=2-40) were examined by vacuum UV radiation (5.7-8.5 eV) generated by stimulated Raman scattering of narrow-bandwidth 193-nm radiation in high pressure hydrogen and deuterium gases. A strong threshold energy dependence on cluster size is observed, featuring major maxima at 10 and 20. The magic behavior at n=10 is consistent with the results of the photofragmentation and CID experiments reported previously.

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