Photoionization of small silicon clusters: ionization potentials for Si2 to Si40

K. Fuke, K. Tsukamoto, F. Misaizu

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


Photoionization thresholds of Sin (n=2-40) were examined by vacuum UV radiation (5.7-8.5 eV) generated by stimulated Raman scattering of narrow-bandwidth 193-nm radiation in high pressure hydrogen and deuterium gases. A strong threshold energy dependence on cluster size is observed, featuring major maxima at 10 and 20. The magic behavior at n=10 is consistent with the results of the photofragmentation and CID experiments reported previously.

Original languageEnglish
Pages (from-to)204-206
Number of pages3
JournalZeitschrift für Physik D Atoms, Molecules and Clusters
Issue number1 Supplement
Publication statusPublished - 1993 Mar 1
Externally publishedYes


  • 34.50.Lf
  • 36.40.+d

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


Dive into the research topics of 'Photoionization of small silicon clusters: ionization potentials for Si2 to Si40'. Together they form a unique fingerprint.

Cite this