Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth

Hirotake Itoh, Masahiro Yoshita, Hidefumi Akiyama, Dhanorm Plumwongrot, Takeo Maruyama, Shigehisa Arai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We measured photoluminescence of GaInAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2007
PublisherOptical Society of America
ISBN (Print)1557528349, 9781557528346
Publication statusPublished - 2007
EventConference on Lasers and Electro-Optics, CLEO 2007 - Baltimore, MD, United States
Duration: 2007 May 62007 May 6

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2007
Country/TerritoryUnited States
CityBaltimore, MD
Period07/5/607/5/6

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