Photoluminescence of heavily doped GaAs/AlGaAs quantum wells in high magnetic fields

J. R. Anderson; M. Górska; J. Y. Jen; Y. Oka; I. Mogi; C. E.C. Wood

doi:10.1016/S0921-5093(96)10309-9

Photoluminescence of heavily doped GaAs/AlGaAs quantum wells in high magnetic fields

J. R. Anderson, M. Górska, J. Y. Jen, Y. Oka, I. Mogi, C. E.C. Wood

IMR - Materials Property Division

Research output: Contribution to journal › Article › peer-review

Abstract

We studied the photoluminescence in GaAs/AlGaAs single quantum wells at fields up to a maximum of 22 T and observed spectra due to impurities, heavy-hole excitons, and Landau levels. The wells were doped with Si at different doping levels up to 3 x 10¹⁸ cm^-3 in order to examine this influence on the photoluminescence. We compare results from two well widths, 50 Å and 100 Å. over an energy range from about 1.4 to 1.7 eV. From the dependence on field of the Landau levels, a cyclotron mass ratio of 0.11 ± 0.02 was determined, which is larger than the bulk GaAs mass ratio of 0.067. The heavy-hole exciton binding energy was about 15 meV for the 100 Å well.

Original language	English
Pages (from-to)	184-188
Number of pages	5
Journal	Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing
Volume	217-218
DOIs	https://doi.org/10.1016/S0921-5093(96)10309-9
Publication status	Published - 1996 Oct 30

Keywords

GaAl/AlGaAs
Photoluminescence
Quantum wells

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10.1016/S0921-5093(96)10309-9

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@article{117724d185ad47ceb614b9ac29710837,

title = "Photoluminescence of heavily doped GaAs/AlGaAs quantum wells in high magnetic fields",

abstract = "We studied the photoluminescence in GaAs/AlGaAs single quantum wells at fields up to a maximum of 22 T and observed spectra due to impurities, heavy-hole excitons, and Landau levels. The wells were doped with Si at different doping levels up to 3 x 1018 cm-3 in order to examine this influence on the photoluminescence. We compare results from two well widths, 50 {\AA} and 100 {\AA}. over an energy range from about 1.4 to 1.7 eV. From the dependence on field of the Landau levels, a cyclotron mass ratio of 0.11 ± 0.02 was determined, which is larger than the bulk GaAs mass ratio of 0.067. The heavy-hole exciton binding energy was about 15 meV for the 100 {\AA} well.",

keywords = "GaAl/AlGaAs, Photoluminescence, Quantum wells",

author = "Anderson, {J. R.} and M. G{\'o}rska and Jen, {J. Y.} and Y. Oka and I. Mogi and Wood, {C. E.C.}",

note = "Funding Information: We wish to thank the members of the High-Field Laboratory of the Institute for Materials Research for their assistance in carrying out these measurements. We also acknowledge many helpful discussions with Professors A. Kasuya and J. Kossut. This research was supported in part by the Research Institute for Scientific Measurements, Tohoku University.",

year = "1996",

month = oct,

day = "30",

doi = "10.1016/S0921-5093(96)10309-9",

language = "English",

volume = "217-218",

pages = "184--188",

journal = "Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing",

issn = "0921-5093",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Photoluminescence of heavily doped GaAs/AlGaAs quantum wells in high magnetic fields

AU - Anderson, J. R.

AU - Górska, M.

AU - Jen, J. Y.

AU - Oka, Y.

AU - Mogi, I.

AU - Wood, C. E.C.

N1 - Funding Information: We wish to thank the members of the High-Field Laboratory of the Institute for Materials Research for their assistance in carrying out these measurements. We also acknowledge many helpful discussions with Professors A. Kasuya and J. Kossut. This research was supported in part by the Research Institute for Scientific Measurements, Tohoku University.

PY - 1996/10/30

Y1 - 1996/10/30

N2 - We studied the photoluminescence in GaAs/AlGaAs single quantum wells at fields up to a maximum of 22 T and observed spectra due to impurities, heavy-hole excitons, and Landau levels. The wells were doped with Si at different doping levels up to 3 x 1018 cm-3 in order to examine this influence on the photoluminescence. We compare results from two well widths, 50 Å and 100 Å. over an energy range from about 1.4 to 1.7 eV. From the dependence on field of the Landau levels, a cyclotron mass ratio of 0.11 ± 0.02 was determined, which is larger than the bulk GaAs mass ratio of 0.067. The heavy-hole exciton binding energy was about 15 meV for the 100 Å well.

AB - We studied the photoluminescence in GaAs/AlGaAs single quantum wells at fields up to a maximum of 22 T and observed spectra due to impurities, heavy-hole excitons, and Landau levels. The wells were doped with Si at different doping levels up to 3 x 1018 cm-3 in order to examine this influence on the photoluminescence. We compare results from two well widths, 50 Å and 100 Å. over an energy range from about 1.4 to 1.7 eV. From the dependence on field of the Landau levels, a cyclotron mass ratio of 0.11 ± 0.02 was determined, which is larger than the bulk GaAs mass ratio of 0.067. The heavy-hole exciton binding energy was about 15 meV for the 100 Å well.

KW - GaAl/AlGaAs

KW - Photoluminescence

KW - Quantum wells

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U2 - 10.1016/S0921-5093(96)10309-9

DO - 10.1016/S0921-5093(96)10309-9

M3 - Article

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SN - 0921-5093

VL - 217-218

SP - 184

EP - 188

JO - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing

JF - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing

ER -

Photoluminescence of heavily doped GaAs/AlGaAs quantum wells in high magnetic fields

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Keywords

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