TY - GEN
T1 - Photoluminescence studies of sequentially Mg and H ion-implanted GaN with various implantation depths and crystallographic planes
AU - Shima, Kohei
AU - Kojima, Kazunobu
AU - Uedono, Akira
AU - Chichibu, Shigefusa F.
N1 - Funding Information:
The authors would like to thank Dr. H. Iguchi, Ass. Prof. T. Narita, and Dr. K. Kataoka of Toyota Central Research Laboratories for providing the samples. This work was supported in part by “Cross-ministerial Strategic Innovation Promotion Program (SIP)” by NEDO, “Program for research and development of next-generation semiconductor to realize energy-saving society” by MEXT, “Program of Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials”, and JSPS KAKENHI (Grant Numbers JP16H06427 and JP17H04809) by MEXT, Japan.
Publisher Copyright:
© 2019 JSAP.
PY - 2019/6
Y1 - 2019/6
N2 - GaN is one of the promising candidates for the use in high-power electronic devices 1) operating at high frequencies, and normally-off GaN-based transistors on freestanding (FS) GaN substrates with low specific on-state resistances (~1.0 mΩ•cm 2) and high off-state breakdown voltage (>1.7 kV) have been demonstrated. 2-4) One of the challenging issues for producing such devices at low cost is the control of conductivity type and conductivity at designated segments using an ion-implantation (I/I) technique. Especially, p-type doping by Mg-I/I has been difficult 5-8) because donor-type defects introduced by I/I and/or donor impurities such as O or Si diffused from the protective overlayer during post-implantation annealing (PIA) 7) likely compensate holes.
AB - GaN is one of the promising candidates for the use in high-power electronic devices 1) operating at high frequencies, and normally-off GaN-based transistors on freestanding (FS) GaN substrates with low specific on-state resistances (~1.0 mΩ•cm 2) and high off-state breakdown voltage (>1.7 kV) have been demonstrated. 2-4) One of the challenging issues for producing such devices at low cost is the control of conductivity type and conductivity at designated segments using an ion-implantation (I/I) technique. Especially, p-type doping by Mg-I/I has been difficult 5-8) because donor-type defects introduced by I/I and/or donor impurities such as O or Si diffused from the protective overlayer during post-implantation annealing (PIA) 7) likely compensate holes.
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U2 - 10.23919/IWJT.2019.8802886
DO - 10.23919/IWJT.2019.8802886
M3 - Conference contribution
AN - SCOPUS:85072064043
T3 - 19th International Workshop on Junction Technology, IWJT 2019
BT - 19th International Workshop on Junction Technology, IWJT 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th International Workshop on Junction Technology, IWJT 2019
Y2 - 6 June 2019 through 7 June 2019
ER -