Photoluminescence study of InAs quantum dots and quantum dashes grown on GaAs(211)B

Shiping Guo; Hideo Ohno; Aidong Shen; Yuzo Ohno; Fumihiro Matsukura

doi:10.1143/jjap.37.1527

Photoluminescence study of InAs quantum dots and quantum dashes grown on GaAs(211)B

Shiping Guo, Hideo Ohno, Aidong Shen, Yuzo Ohno, Fumihiro Matsukura

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Abstract

InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) were grown by molecular beam epitaxy on GaAs (211)B substrates. QDs with bimodal size distribution were formed at lower growth temperatures, whereas QDHs were observed at higher growth temperatures. Photoluminescence (PL) intensity and peak position of QDs and QDHs showed similar temperature dependence, whereas the excitation density dependence of the PL peak intensity and the PL peak energy of the two nanostructures was different. The blue shift in QDH peak energy with the increase of the excitation density is suggested to be due to the existence of the piezoelectric field in InAs QDHs.

Original language	English
Pages (from-to)	1527-1531
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	37
Issue number	3 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.37.1527
Publication status	Published - 1998 Mar

Keywords

Blue-shift
Gaas (211)b
Molecular beam epitaxy
Photoluminescence
Quantum dashes
Quantum dots

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10.1143/jjap.37.1527

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title = "Photoluminescence study of InAs quantum dots and quantum dashes grown on GaAs(211)B",

abstract = "InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) were grown by molecular beam epitaxy on GaAs (211)B substrates. QDs with bimodal size distribution were formed at lower growth temperatures, whereas QDHs were observed at higher growth temperatures. Photoluminescence (PL) intensity and peak position of QDs and QDHs showed similar temperature dependence, whereas the excitation density dependence of the PL peak intensity and the PL peak energy of the two nanostructures was different. The blue shift in QDH peak energy with the increase of the excitation density is suggested to be due to the existence of the piezoelectric field in InAs QDHs.",

keywords = "Blue-shift, Gaas (211)b, Molecular beam epitaxy, Photoluminescence, Quantum dashes, Quantum dots",

author = "Shiping Guo and Hideo Ohno and Aidong Shen and Yuzo Ohno and Fumihiro Matsukura",

year = "1998",

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T1 - Photoluminescence study of InAs quantum dots and quantum dashes grown on GaAs(211)B

AU - Guo, Shiping

AU - Ohno, Hideo

AU - Shen, Aidong

AU - Ohno, Yuzo

AU - Matsukura, Fumihiro

PY - 1998/3

Y1 - 1998/3

N2 - InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) were grown by molecular beam epitaxy on GaAs (211)B substrates. QDs with bimodal size distribution were formed at lower growth temperatures, whereas QDHs were observed at higher growth temperatures. Photoluminescence (PL) intensity and peak position of QDs and QDHs showed similar temperature dependence, whereas the excitation density dependence of the PL peak intensity and the PL peak energy of the two nanostructures was different. The blue shift in QDH peak energy with the increase of the excitation density is suggested to be due to the existence of the piezoelectric field in InAs QDHs.

AB - InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) were grown by molecular beam epitaxy on GaAs (211)B substrates. QDs with bimodal size distribution were formed at lower growth temperatures, whereas QDHs were observed at higher growth temperatures. Photoluminescence (PL) intensity and peak position of QDs and QDHs showed similar temperature dependence, whereas the excitation density dependence of the PL peak intensity and the PL peak energy of the two nanostructures was different. The blue shift in QDH peak energy with the increase of the excitation density is suggested to be due to the existence of the piezoelectric field in InAs QDHs.

KW - Blue-shift

KW - Gaas (211)b

KW - Molecular beam epitaxy

KW - Photoluminescence

KW - Quantum dashes

KW - Quantum dots

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JO - Japanese Journal of Applied Physics

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Photoluminescence study of InAs quantum dots and quantum dashes grown on GaAs(211)B

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Keywords

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