Photon-stimulated desorption from chemically treated Si surfaces

Isao Ochiai, Taro Ogawa, Yuji Takakuwa, Kozo Mochiji

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Experimental results are presented on the synchrotron-radiation-induced desorption of oxygen ions from HF-treated Si surfaces measured with a quadrupole mass analyzer operated in the pulse-counting mode. The effect of atomic hydrogen exposure was studied. Desorption of H+, O+ and F+ ions was observed from HF-treated Si surfaces. The yield of O+ ions was increased more than 30-fold by exposure to atomic hydrogen.

Original languageEnglish
Pages (from-to)175-177
Number of pages3
JournalSurface Science
Issue numberPART 1
Publication statusPublished - 1993 May 10


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