Photonic frequency double-mixing conversion over the 120-GHz band using InP- and graphene-based transistors

Kenta Sugawara, Tetsuya Kawasaki, Gen Tamamushi, Hussin Mastura, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Jun Ichi Kani, Jun Terada, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.

Original languageEnglish
Article number7346406
Pages (from-to)2011-2019
Number of pages9
JournalJournal of Lightwave Technology
Issue number8
Publication statusPublished - 2016 Apr 15


  • Graphene
  • millimeter wave photonics
  • radio access networks


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