Photopatterning of heterostructured polymer Langmuir-Blodgett films

Tiesheng Li; Masaya Mitsuishi; Tokuji Miyashita

doi:10.1016/j.tsf.2007.07.164

Photopatterning of heterostructured polymer Langmuir-Blodgett films

Tiesheng Li, Masaya Mitsuishi, Tokuji Miyashita

ENG - Applied Chemistry

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Heterostructured polymer Langmuir-Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication.

Original language	English
Pages (from-to)	2115-2119
Number of pages	5
Journal	Thin Solid Films
Volume	516
Issue number	8
DOIs	https://doi.org/10.1016/j.tsf.2007.07.164
Publication status	Published - 2008 Feb 29

Keywords

Copolymer
Heterostructure
Langmuir-Blodgett films
Photopatterning

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2007.07.164

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@article{a3b969da03554b25b71e2c243502b59f,

title = "Photopatterning of heterostructured polymer Langmuir-Blodgett films",

abstract = "Heterostructured polymer Langmuir-Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication.",

keywords = "Copolymer, Heterostructure, Langmuir-Blodgett films, Photopatterning",

author = "Tiesheng Li and Masaya Mitsuishi and Tokuji Miyashita",

note = "Funding Information: We would like to thank Prof. T. Miyazaki, and Dr. Y. Ando, Department of Applied Physics, Graduate School of Engineering, Tohoku University, for the use of surface profilomertry, and Prof. Sumei Li and Prof. Luyuan Mao for the use of JSM-5610LV SEM and an SPM-9500 J3 atomic force microscopy. This work was partially supported by a Grant-in-Aid for Scientific Research (No. 14205130) from the Japanese Ministry of Education, Sports, and Culture, The Innovation Fund for Outstanding Scholar of Henan Province (0621001100) and The Fund for Outstanding Young Scholar of Henan Province (074100510015); The Nature Science Foundation of China (20572102); The Scientific Research Foundation for the Returned Chinese Scholar, State Education Ministry and Nature Science Foundation of Henan Province (0611020100) China.",

year = "2008",

month = feb,

day = "29",

doi = "10.1016/j.tsf.2007.07.164",

language = "English",

volume = "516",

pages = "2115--2119",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "8",

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TY - JOUR

T1 - Photopatterning of heterostructured polymer Langmuir-Blodgett films

AU - Li, Tiesheng

AU - Mitsuishi, Masaya

AU - Miyashita, Tokuji

N1 - Funding Information: We would like to thank Prof. T. Miyazaki, and Dr. Y. Ando, Department of Applied Physics, Graduate School of Engineering, Tohoku University, for the use of surface profilomertry, and Prof. Sumei Li and Prof. Luyuan Mao for the use of JSM-5610LV SEM and an SPM-9500 J3 atomic force microscopy. This work was partially supported by a Grant-in-Aid for Scientific Research (No. 14205130) from the Japanese Ministry of Education, Sports, and Culture, The Innovation Fund for Outstanding Scholar of Henan Province (0621001100) and The Fund for Outstanding Young Scholar of Henan Province (074100510015); The Nature Science Foundation of China (20572102); The Scientific Research Foundation for the Returned Chinese Scholar, State Education Ministry and Nature Science Foundation of Henan Province (0611020100) China.

PY - 2008/2/29

Y1 - 2008/2/29

N2 - Heterostructured polymer Langmuir-Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication.

AB - Heterostructured polymer Langmuir-Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication.

KW - Copolymer

KW - Heterostructure

KW - Langmuir-Blodgett films

KW - Photopatterning

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UR - http://www.scopus.com/inward/citedby.url?scp=38649108160&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.07.164

DO - 10.1016/j.tsf.2007.07.164

M3 - Article

AN - SCOPUS:38649108160

SN - 0040-6090

VL - 516

SP - 2115

EP - 2119

JO - Thin Solid Films

JF - Thin Solid Films

IS - 8

ER -

Photopatterning of heterostructured polymer Langmuir-Blodgett films

Abstract

Keywords

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