Photoreflectance (PR) has been developed as a useful technique for the characterization of chalcopyrite hétéroépitaxial layers. PR measurements at 77 K have been done on CuAlSe2 layers grown on GaAs and GaP substrates by means of the low-pressure metalorganic chemical vapor deposition technique. The analysis of the PR spectra in terms of transition energy, intensity and broadening parameter has led us to the successful characterization of the crystal quality, stress and the crystallographic orientation in the CuAlSe2 epitaxial layer.
- Chalcopyrite semiconductors
- Metalorganic chemical vapor deposition
- Modulation spectroscopy