Photoreflectance characterization of cualse2hétéroépitaxial layers grown by metalorganic chemical vapor deposition

Sho Shirakata; Shigefusa Chichibu; Satoru Matsumoto; Shigehiro Isomura

doi:10.7567/JJAPS.32S3.494

Photoreflectance characterization of cualse₂hétéroépitaxial layers grown by metalorganic chemical vapor deposition

Sho Shirakata, Shigefusa Chichibu, Satoru Matsumoto, Shigehiro Isomura

IMRAM - Division of Measurements

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Photoreflectance (PR) has been developed as a useful technique for the characterization of chalcopyrite hétéroépitaxial layers. PR measurements at 77 K have been done on CuAlSe₂ layers grown on GaAs and GaP substrates by means of the low-pressure metalorganic chemical vapor deposition technique. The analysis of the PR spectra in terms of transition energy, intensity and broadening parameter has led us to the successful characterization of the crystal quality, stress and the crystallographic orientation in the CuAlSe₂ epitaxial layer.

Original language	English
Pages (from-to)	494-496
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	32
Issue number	S3
DOIs	https://doi.org/10.7567/JJAPS.32S3.494
Publication status	Published - 1993 Jan

Keywords

Chalcopyrite semiconductors
CuAISe
Heteroepitaxy
Metalorganic chemical vapor deposition
Modulation spectroscopy
Photoreflectance

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10.7567/JJAPS.32S3.494

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title = "Photoreflectance characterization of cualse2h{\'e}t{\'e}ro{\'e}pitaxial layers grown by metalorganic chemical vapor deposition",

abstract = "Photoreflectance (PR) has been developed as a useful technique for the characterization of chalcopyrite h{\'e}t{\'e}ro{\'e}pitaxial layers. PR measurements at 77 K have been done on CuAlSe2 layers grown on GaAs and GaP substrates by means of the low-pressure metalorganic chemical vapor deposition technique. The analysis of the PR spectra in terms of transition energy, intensity and broadening parameter has led us to the successful characterization of the crystal quality, stress and the crystallographic orientation in the CuAlSe2 epitaxial layer.",

keywords = "Chalcopyrite semiconductors, CuAISe, Heteroepitaxy, Metalorganic chemical vapor deposition, Modulation spectroscopy, Photoreflectance",

author = "Sho Shirakata and Shigefusa Chichibu and Satoru Matsumoto and Shigehiro Isomura",

year = "1993",

month = jan,

doi = "10.7567/JJAPS.32S3.494",

language = "English",

volume = "32",

pages = "494--496",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Photoreflectance characterization of cualse2hétéroépitaxial layers grown by metalorganic chemical vapor deposition

AU - Shirakata, Sho

AU - Chichibu, Shigefusa

AU - Matsumoto, Satoru

AU - Isomura, Shigehiro

PY - 1993/1

Y1 - 1993/1

N2 - Photoreflectance (PR) has been developed as a useful technique for the characterization of chalcopyrite hétéroépitaxial layers. PR measurements at 77 K have been done on CuAlSe2 layers grown on GaAs and GaP substrates by means of the low-pressure metalorganic chemical vapor deposition technique. The analysis of the PR spectra in terms of transition energy, intensity and broadening parameter has led us to the successful characterization of the crystal quality, stress and the crystallographic orientation in the CuAlSe2 epitaxial layer.

AB - Photoreflectance (PR) has been developed as a useful technique for the characterization of chalcopyrite hétéroépitaxial layers. PR measurements at 77 K have been done on CuAlSe2 layers grown on GaAs and GaP substrates by means of the low-pressure metalorganic chemical vapor deposition technique. The analysis of the PR spectra in terms of transition energy, intensity and broadening parameter has led us to the successful characterization of the crystal quality, stress and the crystallographic orientation in the CuAlSe2 epitaxial layer.

KW - Chalcopyrite semiconductors

KW - CuAISe

KW - Heteroepitaxy

KW - Metalorganic chemical vapor deposition

KW - Modulation spectroscopy

KW - Photoreflectance

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DO - 10.7567/JJAPS.32S3.494

M3 - Article

AN - SCOPUS:84950556098

SN - 0021-4922

VL - 32

SP - 494

EP - 496

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - S3

ER -

Photoreflectance characterization of cualse₂hétéroépitaxial layers grown by metalorganic chemical vapor deposition

Abstract

Keywords

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