Photoreflectance Study of cuAlSe2Heteroepitaxial Layers

Sho Shirakata; Shigefusa Chichibu; Satoru Matsumoto; Shigehiro Isomura

doi:10.1143/JJAP.32.L167

Photoreflectance Study of cuAlSe₂Heteroepitaxial Layers

Sho Shirakata, Shigefusa Chichibu, Satoru Matsumoto, Shigehiro Isomura

IMRAM - Division of Measurements

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Photorefiectance (PR) spectra have been measured on the CuAlSe2 epitaxial layers grown on GaAs(lOO), GaAs(lll)A and GaP(lOO) substrates by means of the metalorganic chemical vapor deposition technique. The PR spectra showed strong dependence on the substrate, reflecting the orientation of the epitaxial layer. The results have been well explained from the polarization selection rule with the aid of X-ray measurements. Stress in the epitaxial layer is discussed in terms of the crystal field splitting of the valence bands.

Original language	English
Pages (from-to)	167-169
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	32
Issue number	2 A
DOIs	https://doi.org/10.1143/JJAP.32.L167
Publication status	Published - 1993 Feb

Keywords

CuAISe2
EpitaxialFilms
Metalorganic chemical vapor deposition
Modulation spectroscopy
Photorefiectance

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10.1143/JJAP.32.L167

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abstract = "Photorefiectance (PR) spectra have been measured on the CuAlSe2 epitaxial layers grown on GaAs(lOO), GaAs(lll)A and GaP(lOO) substrates by means of the metalorganic chemical vapor deposition technique. The PR spectra showed strong dependence on the substrate, reflecting the orientation of the epitaxial layer. The results have been well explained from the polarization selection rule with the aid of X-ray measurements. Stress in the epitaxial layer is discussed in terms of the crystal field splitting of the valence bands.",

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author = "Sho Shirakata and Shigefusa Chichibu and Satoru Matsumoto and Shigehiro Isomura",

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AU - Shirakata, Sho

AU - Chichibu, Shigefusa

AU - Matsumoto, Satoru

AU - Isomura, Shigehiro

PY - 1993/2

Y1 - 1993/2

N2 - Photorefiectance (PR) spectra have been measured on the CuAlSe2 epitaxial layers grown on GaAs(lOO), GaAs(lll)A and GaP(lOO) substrates by means of the metalorganic chemical vapor deposition technique. The PR spectra showed strong dependence on the substrate, reflecting the orientation of the epitaxial layer. The results have been well explained from the polarization selection rule with the aid of X-ray measurements. Stress in the epitaxial layer is discussed in terms of the crystal field splitting of the valence bands.

AB - Photorefiectance (PR) spectra have been measured on the CuAlSe2 epitaxial layers grown on GaAs(lOO), GaAs(lll)A and GaP(lOO) substrates by means of the metalorganic chemical vapor deposition technique. The PR spectra showed strong dependence on the substrate, reflecting the orientation of the epitaxial layer. The results have been well explained from the polarization selection rule with the aid of X-ray measurements. Stress in the epitaxial layer is discussed in terms of the crystal field splitting of the valence bands.

KW - CuAISe2

KW - EpitaxialFilms

KW - Metalorganic chemical vapor deposition

KW - Modulation spectroscopy

KW - Photorefiectance

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

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ER -

Photoreflectance Study of cuAlSe₂Heteroepitaxial Layers

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Keywords

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