Photoreflectance Study of cuAlSe2Heteroepitaxial Layers

Sho Shirakata, Shigefusa Chichibu, Satoru Matsumoto, Shigehiro Isomura

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32 Citations (Scopus)


Photorefiectance (PR) spectra have been measured on the CuAlSe2 epitaxial layers grown on GaAs(lOO), GaAs(lll)A and GaP(lOO) substrates by means of the metalorganic chemical vapor deposition technique. The PR spectra showed strong dependence on the substrate, reflecting the orientation of the epitaxial layer. The results have been well explained from the polarization selection rule with the aid of X-ray measurements. Stress in the epitaxial layer is discussed in terms of the crystal field splitting of the valence bands.

Original languageEnglish
Pages (from-to)167-169
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number2 A
Publication statusPublished - 1993 Feb


  • CuAISe2
  • EpitaxialFilms
  • Metalorganic chemical vapor deposition
  • Modulation spectroscopy
  • Photorefiectance


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