Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by MOVPE

Pawinee Klangtakai; Sakuntam Sanorpim; Ryuji Katayama; Kentaro Onabe

doi:10.1109/INEC.2010.5424516

Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by MOVPE

Pawinee Klangtakai, Sakuntam Sanorpim, Ryuji Katayama, Kentaro Onabe

Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaAsN/GaAs T-junction quantum wires (T-QWRs) grown by two steps of metal-organic vapor phase epitaxy growth technique in (001) and (110) directions have been investigated by photoreflectance (PR) spectroscopy. PR resonances associated with extended states in all of GaAsN quantum well (QW) and TQWR have been observed. An evidence of a one-dimensional structure at T-intersection of the two quantum wells on the (001) and (110) surfaces was clearly confirmed. Further evidence of TQWRs was investigated by temperature dependence of PR spectra from 10 to 300 K. For GaAsN T-QWRs, PR peak position remain constant when temperature increases from 10 to 100 K. This indicates high thermal stability of QWRs structure.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	402-403
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424516
Publication status	Published - 2010 May 5
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	10/1/3 → 10/1/8

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2010.5424516

Cite this

Klangtakai, P., Sanorpim, S., Katayama, R., & Onabe, K. (2010). Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by MOVPE. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 402-403). [5424516] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424516

Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by MOVPE. / Klangtakai, Pawinee; Sanorpim, Sakuntam; Katayama, Ryuji et al.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 402-403 5424516 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Klangtakai, P, Sanorpim, S, Katayama, R & Onabe, K 2010, Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by MOVPE. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424516, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 402-403, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424516

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title = "Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by MOVPE",

abstract = "GaAsN/GaAs T-junction quantum wires (T-QWRs) grown by two steps of metal-organic vapor phase epitaxy growth technique in (001) and (110) directions have been investigated by photoreflectance (PR) spectroscopy. PR resonances associated with extended states in all of GaAsN quantum well (QW) and TQWR have been observed. An evidence of a one-dimensional structure at T-intersection of the two quantum wells on the (001) and (110) surfaces was clearly confirmed. Further evidence of TQWRs was investigated by temperature dependence of PR spectra from 10 to 300 K. For GaAsN T-QWRs, PR peak position remain constant when temperature increases from 10 to 100 K. This indicates high thermal stability of QWRs structure.",

author = "Pawinee Klangtakai and Sakuntam Sanorpim and Ryuji Katayama and Kentaro Onabe",

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AU - Onabe, Kentaro

PY - 2010/5/5

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N2 - GaAsN/GaAs T-junction quantum wires (T-QWRs) grown by two steps of metal-organic vapor phase epitaxy growth technique in (001) and (110) directions have been investigated by photoreflectance (PR) spectroscopy. PR resonances associated with extended states in all of GaAsN quantum well (QW) and TQWR have been observed. An evidence of a one-dimensional structure at T-intersection of the two quantum wells on the (001) and (110) surfaces was clearly confirmed. Further evidence of TQWRs was investigated by temperature dependence of PR spectra from 10 to 300 K. For GaAsN T-QWRs, PR peak position remain constant when temperature increases from 10 to 100 K. This indicates high thermal stability of QWRs structure.

AB - GaAsN/GaAs T-junction quantum wires (T-QWRs) grown by two steps of metal-organic vapor phase epitaxy growth technique in (001) and (110) directions have been investigated by photoreflectance (PR) spectroscopy. PR resonances associated with extended states in all of GaAsN quantum well (QW) and TQWR have been observed. An evidence of a one-dimensional structure at T-intersection of the two quantum wells on the (001) and (110) surfaces was clearly confirmed. Further evidence of TQWRs was investigated by temperature dependence of PR spectra from 10 to 300 K. For GaAsN T-QWRs, PR peak position remain constant when temperature increases from 10 to 100 K. This indicates high thermal stability of QWRs structure.

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Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by MOVPE

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