TY - JOUR
T1 - Physical guiding principles for high quality resistive random access memory stack with al2o3 insertion layer
AU - Yang, Moon Young
AU - Kamiya, Katsumasa
AU - Magyari-Kope, Blanka
AU - Momida, Hiroyoshi
AU - Ohno, Takahisa
AU - Niwa, Masaaki
AU - Nishi, Yoshio
AU - Shiraishi, Kenji
PY - 2013/4
Y1 - 2013/4
N2 - We theoretically clarified the atomistic role of the Al2O3 oxygen vacancy (VO) barrier layer in advanced ReRAM stacks. We found that VO filament formation in Al2O3 can be controlled by applying voltage when the Al2O3 layer is in contact with VO source layer such as Hf, although VO formation in Al2O3 is difficult in usual situation. Moreover, we proposed a physical guiding principle toward designing high quality ReRAM stacks with Al2O3 VO barrier layers.
AB - We theoretically clarified the atomistic role of the Al2O3 oxygen vacancy (VO) barrier layer in advanced ReRAM stacks. We found that VO filament formation in Al2O3 can be controlled by applying voltage when the Al2O3 layer is in contact with VO source layer such as Hf, although VO formation in Al2O3 is difficult in usual situation. Moreover, we proposed a physical guiding principle toward designing high quality ReRAM stacks with Al2O3 VO barrier layers.
UR - http://www.scopus.com/inward/record.url?scp=84880827484&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84880827484&partnerID=8YFLogxK
U2 - 10.7567/JJAP.52.04CD11
DO - 10.7567/JJAP.52.04CD11
M3 - Article
AN - SCOPUS:84880827484
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4 PART 2
M1 - 04CD11
ER -