Physics and materials of spintronics in semiconductors

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


Ferromagnetic III-V semiconductors allow us to observe a wide variety of phenomena that either cannot be realized or are very difficult to observe in metal ferromagnets; ranging from reversible electric-field control of ferromagnetic phase transition to obtaining current-induced domain wall velocity as a function of current-density in a wide range of velocity. Here, I present a few recent developments in these fronts focusing on (Ga,Mn)As. A brief discussion on the material front is also given.

Original languageEnglish
Pages (from-to)4057-4061
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number12
Publication statusPublished - 2006
Event4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV - Sendai, Japan
Duration: 2006 Aug 152006 Aug 18


Dive into the research topics of 'Physics and materials of spintronics in semiconductors'. Together they form a unique fingerprint.

Cite this