Ferromagnetic III-V semiconductors allow us to observe a wide variety of phenomena that either cannot be realized or are very difficult to observe in metal ferromagnets; ranging from reversible electric-field control of ferromagnetic phase transition to obtaining current-induced domain wall velocity as a function of current-density in a wide range of velocity. Here, I present a few recent developments in these fronts focusing on (Ga,Mn)As. A brief discussion on the material front is also given.
|Number of pages||5|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2006|
|Event||4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV - Sendai, Japan|
Duration: 2006 Aug 15 → 2006 Aug 18