Physics in fermi level Pinning at the polySi/Hf-based high-k oxide interface

K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Kohno, T. Chikyo, H. Kitajima, T. Arikado

Research output: Contribution to journalConference articlepeer-review

17 Citations (Scopus)


We report that O vacancy (Vo) formation in ionic Hf-based dielectrics and subsequent electron transfer into poly Si gates across the interface, definitely cause substantial flat band (Vfb) shifts especially for p+ gate MISFETs. Our theory can systematically reproduce experiments related to Hf-based dielectrics, and gives a guiding principle towards gate/high-k oxide interface control.

Original languageEnglish
Pages (from-to)108-109
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 2004 Oct 1
Externally publishedYes
Event2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States
Duration: 2004 Jun 152004 Jun 17

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


Dive into the research topics of 'Physics in fermi level Pinning at the polySi/Hf-based high-k oxide interface'. Together they form a unique fingerprint.

Cite this