Physics in fermi level Pinning at the polySi/Hf-based high-k oxide interface

K. Shiraishi; K. Yamada; K. Torii; Y. Akasaka; K. Nakajima; M. Kohno; T. Chikyo; H. Kitajima; T. Arikado

Physics in fermi level Pinning at the polySi/Hf-based high-k oxide interface

K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Kohno, T. Chikyo, H. Kitajima, T. Arikado

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report that O vacancy (Vo) formation in ionic Hf-based dielectrics and subsequent electron transfer into poly Si gates across the interface, definitely cause substantial flat band (Vfb) shifts especially for p+ gate MISFETs. Our theory can systematically reproduce experiments related to Hf-based dielectrics, and gives a guiding principle towards gate/high-k oxide interface control.

Original language	English
Pages (from-to)	108-109
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 2004 Oct 1
Externally published	Yes
Event	2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States Duration: 2004 Jun 15 → 2004 Jun 17

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Physics in fermi level Pinning at the polySi/Hf-based high-k oxide interface",

abstract = "We report that O vacancy (Vo) formation in ionic Hf-based dielectrics and subsequent electron transfer into poly Si gates across the interface, definitely cause substantial flat band (Vfb) shifts especially for p+ gate MISFETs. Our theory can systematically reproduce experiments related to Hf-based dielectrics, and gives a guiding principle towards gate/high-k oxide interface control.",

author = "K. Shiraishi and K. Yamada and K. Torii and Y. Akasaka and K. Nakajima and M. Kohno and T. Chikyo and H. Kitajima and T. Arikado",

year = "2004",

month = oct,

day = "1",

language = "English",

pages = "108--109",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 Symposium on VLSI Technology - Digest of Technical Papers ; Conference date: 15-06-2004 Through 17-06-2004",

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TY - JOUR

T1 - Physics in fermi level Pinning at the polySi/Hf-based high-k oxide interface

AU - Shiraishi, K.

AU - Yamada, K.

AU - Torii, K.

AU - Akasaka, Y.

AU - Nakajima, K.

AU - Kohno, M.

AU - Chikyo, T.

AU - Kitajima, H.

AU - Arikado, T.

PY - 2004/10/1

Y1 - 2004/10/1

N2 - We report that O vacancy (Vo) formation in ionic Hf-based dielectrics and subsequent electron transfer into poly Si gates across the interface, definitely cause substantial flat band (Vfb) shifts especially for p+ gate MISFETs. Our theory can systematically reproduce experiments related to Hf-based dielectrics, and gives a guiding principle towards gate/high-k oxide interface control.

AB - We report that O vacancy (Vo) formation in ionic Hf-based dielectrics and subsequent electron transfer into poly Si gates across the interface, definitely cause substantial flat band (Vfb) shifts especially for p+ gate MISFETs. Our theory can systematically reproduce experiments related to Hf-based dielectrics, and gives a guiding principle towards gate/high-k oxide interface control.

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UR - http://www.scopus.com/inward/citedby.url?scp=4544267525&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:4544267525

SN - 0743-1562

SP - 108

EP - 109

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - 2004 Symposium on VLSI Technology - Digest of Technical Papers

Y2 - 15 June 2004 through 17 June 2004

ER -

Physics in fermi level Pinning at the polySi/Hf-based high-k oxide interface

Abstract

ASJC Scopus subject areas

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