Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film

L. V. Minh; M. Hara; H. Kuwano; T. Yokoyama; T. Nishihara; M. Ueda

doi:10.1109/MEMSYS.2015.7051154

Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film

L. V. Minh, M. Hara, H. Kuwano, T. Yokoyama, T. Nishihara, M. Ueda

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

We report the new doped-AlN thin film, (Mg,Zr)AlN, based micro energy harvester. By co-doping Mg and Zr into AlN crystal, (Mg,Zr)AlN shows giant piezoelectricity and preserves low permittivity. (Mg,Zr)AlN has higher figure of merit (FOM = e₃₁²/(ε₀ε)) than conventional PZT. The 13 at.%-(Mg,Zr)AlN had the experimental FOM of up to 16.7 GPa. The micromachining harvester provided the high normalized power density of 3.72 mW.g^-2.cm^-3. This achievement was 1.5-fold increase compared to state of the art.

Original language	English
Title of host publication	2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1094-1097
Number of pages	4
Edition	February
ISBN (Electronic)	9781479979554
DOIs	https://doi.org/10.1109/MEMSYS.2015.7051154
Publication status	Published - 2015 Feb 26
Event	2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015 - Estoril, Portugal Duration: 2015 Jan 18 → 2015 Jan 22

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Number	February
Volume	2015-February
ISSN (Print)	1084-6999

Conference

Conference	2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015
Country/Territory	Portugal
City	Estoril
Period	15/1/18 → 15/1/22

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10.1109/MEMSYS.2015.7051154

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Minh, L. V., Hara, M., Kuwano, H., Yokoyama, T., Nishihara, T., & Ueda, M. (2015). Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film. In 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015 (February ed., pp. 1094-1097). Article 7051154 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMSYS.2015.7051154

Minh, L. V. ; Hara, M. ; Kuwano, H. et al. / Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film. 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 1094-1097 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); February).

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title = "Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film",

abstract = "We report the new doped-AlN thin film, (Mg,Zr)AlN, based micro energy harvester. By co-doping Mg and Zr into AlN crystal, (Mg,Zr)AlN shows giant piezoelectricity and preserves low permittivity. (Mg,Zr)AlN has higher figure of merit (FOM = e312/(ε0ε)) than conventional PZT. The 13 at.%-(Mg,Zr)AlN had the experimental FOM of up to 16.7 GPa. The micromachining harvester provided the high normalized power density of 3.72 mW.g-2.cm-3. This achievement was 1.5-fold increase compared to state of the art.",

author = "Minh, {L. V.} and M. Hara and H. Kuwano and T. Yokoyama and T. Nishihara and M. Ueda",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015 ; Conference date: 18-01-2015 Through 22-01-2015",

year = "2015",

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doi = "10.1109/MEMSYS.2015.7051154",

language = "English",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

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Minh, LV, Hara, M, Kuwano, H, Yokoyama, T, Nishihara, T & Ueda, M 2015, Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film. in 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015. February edn, 7051154, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 1094-1097, 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015, Estoril, Portugal, 15/1/18. https://doi.org/10.1109/MEMSYS.2015.7051154

Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film. / Minh, L. V.; Hara, M.; Kuwano, H. et al.
2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 1094-1097 7051154 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2015-February, No. February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Minh, L. V.

AU - Hara, M.

AU - Kuwano, H.

AU - Yokoyama, T.

AU - Nishihara, T.

AU - Ueda, M.

PY - 2015/2/26

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N2 - We report the new doped-AlN thin film, (Mg,Zr)AlN, based micro energy harvester. By co-doping Mg and Zr into AlN crystal, (Mg,Zr)AlN shows giant piezoelectricity and preserves low permittivity. (Mg,Zr)AlN has higher figure of merit (FOM = e312/(ε0ε)) than conventional PZT. The 13 at.%-(Mg,Zr)AlN had the experimental FOM of up to 16.7 GPa. The micromachining harvester provided the high normalized power density of 3.72 mW.g-2.cm-3. This achievement was 1.5-fold increase compared to state of the art.

AB - We report the new doped-AlN thin film, (Mg,Zr)AlN, based micro energy harvester. By co-doping Mg and Zr into AlN crystal, (Mg,Zr)AlN shows giant piezoelectricity and preserves low permittivity. (Mg,Zr)AlN has higher figure of merit (FOM = e312/(ε0ε)) than conventional PZT. The 13 at.%-(Mg,Zr)AlN had the experimental FOM of up to 16.7 GPa. The micromachining harvester provided the high normalized power density of 3.72 mW.g-2.cm-3. This achievement was 1.5-fold increase compared to state of the art.

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Minh LV, Hara M, Kuwano H, Yokoyama T, Nishihara T, Ueda M. Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film. In 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 1094-1097. 7051154. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); February). doi: 10.1109/MEMSYS.2015.7051154

Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film

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