Piezoelectric photothermal and photoreflectance spectra of In xGa1-xN grown by radio-frequency molecular beam epitaxy

Eiki Kawano; Yuki Uchibori; Takashi Shimohara; Hironori Komaki; Ryuji Katayama; Kentaro Onabel; Atsuhiko Fukuyama; Tetsuo Ikarl

doi:10.1143/JJAP.45.4601

Piezoelectric photothermal and photoreflectance spectra of In _xGa_1-xN grown by radio-frequency molecular beam epitaxy

Eiki Kawano, Yuki Uchibori, Takashi Shimohara, Hironori Komaki, Ryuji Katayama, Kentaro Onabel, Atsuhiko Fukuyama, Tetsuo Ikarl

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Piezoelectric photothermal spectroscopy (PPTS) measurements were carried out on In^Ga^N (x = 0.01-0.32) thin films grown by radio-frequency molecular beam epitaxy. We found that the band energy shifts to the lower energy side of the spectrum (red shift) with an increase in the indium composition from 0.01 to 0.32. For samples with a lower indium composition, we were able to observe the exciton contribution, and the binding energy was estimated to be 27 meV (x = 0.01). Since conventional photoreflectance (PR) spectroscopy was unable to observe signals for the samples with a higher indium content (x = 0.13, 0.2, and 0.32), the usefulness of this PPTS method for samples with phase fluctuation is demonstrated.

Original language	English
Pages (from-to)	4601-4603
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	5 B
DOIs	https://doi.org/10.1143/JJAP.45.4601
Publication status	Published - 2006 May 25
Externally published	Yes

Keywords

Band gap
Exciton
InGaN
Photoreflectance
Piezoelectric photothermal spectroscopy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.4601

Cite this

Kawano, E., Uchibori, Y., Shimohara, T., Komaki, H., Katayama, R., Onabel, K., Fukuyama, A., & Ikarl, T. (2006). Piezoelectric photothermal and photoreflectance spectra of In _xGa_1-xN grown by radio-frequency molecular beam epitaxy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(5 B), 4601-4603. https://doi.org/10.1143/JJAP.45.4601

Piezoelectric photothermal and photoreflectance spectra of In _xGa_1-xN grown by radio-frequency molecular beam epitaxy. / Kawano, Eiki; Uchibori, Yuki; Shimohara, Takashi et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 5 B, 25.05.2006, p. 4601-4603.

Research output: Contribution to journal › Article › peer-review

Kawano, E, Uchibori, Y, Shimohara, T, Komaki, H, Katayama, R, Onabel, K, Fukuyama, A & Ikarl, T 2006, 'Piezoelectric photothermal and photoreflectance spectra of In _xGa_1-xN grown by radio-frequency molecular beam epitaxy', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 5 B, pp. 4601-4603. https://doi.org/10.1143/JJAP.45.4601

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title = "Piezoelectric photothermal and photoreflectance spectra of In xGa1-xN grown by radio-frequency molecular beam epitaxy",

abstract = "Piezoelectric photothermal spectroscopy (PPTS) measurements were carried out on In^Ga^N (x = 0.01-0.32) thin films grown by radio-frequency molecular beam epitaxy. We found that the band energy shifts to the lower energy side of the spectrum (red shift) with an increase in the indium composition from 0.01 to 0.32. For samples with a lower indium composition, we were able to observe the exciton contribution, and the binding energy was estimated to be 27 meV (x = 0.01). Since conventional photoreflectance (PR) spectroscopy was unable to observe signals for the samples with a higher indium content (x = 0.13, 0.2, and 0.32), the usefulness of this PPTS method for samples with phase fluctuation is demonstrated.",

keywords = "Band gap, Exciton, InGaN, Photoreflectance, Piezoelectric photothermal spectroscopy",

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AU - Kawano, Eiki

AU - Uchibori, Yuki

AU - Shimohara, Takashi

AU - Komaki, Hironori

AU - Katayama, Ryuji

AU - Onabel, Kentaro

AU - Fukuyama, Atsuhiko

AU - Ikarl, Tetsuo

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AB - Piezoelectric photothermal spectroscopy (PPTS) measurements were carried out on In^Ga^N (x = 0.01-0.32) thin films grown by radio-frequency molecular beam epitaxy. We found that the band energy shifts to the lower energy side of the spectrum (red shift) with an increase in the indium composition from 0.01 to 0.32. For samples with a lower indium composition, we were able to observe the exciton contribution, and the binding energy was estimated to be 27 meV (x = 0.01). Since conventional photoreflectance (PR) spectroscopy was unable to observe signals for the samples with a higher indium content (x = 0.13, 0.2, and 0.32), the usefulness of this PPTS method for samples with phase fluctuation is demonstrated.

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KW - InGaN

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KW - Piezoelectric photothermal spectroscopy

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