Planar doping by interrupted MOVPE growth of GaAs

H. Ohno, E. Ikeda, H. Hasegawa

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


Planar doping of GaAs by metalorganic vapor phase epitaxy, involving the suspension of growth whilst the doping gas is introduced, is investigated to synthesize complex free-carrier profiles. Silicon is used as a dopant. It deposits on the non-growing surface and is subsequently incorporated as a planar region of doping. It is shown that free-carrier profiles can be produced by including dopant planes in the epitaxial layer.

Original languageEnglish
Pages (from-to)15-20
Number of pages6
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 1984 Sept 1


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