TY - GEN
T1 - Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature
AU - Ohno, Yutaka
AU - Yoshida, Hideto
AU - Takeda, Seiji
AU - Jianbo, Liang
AU - Shigekawa, Naoteru
N1 - Funding Information:
A part of this work was supported by "Research and Development of ultra-high efficiency and low-cost III-V compound semiconductor solar cell modules (High efficiency and low-cost III-V/Si tandem)" project of NEDO, by JSPS KAKENHI Grant No. 15H03535 (2015-2018)
Publisher Copyright:
© 2017 JSPS 191st Committee on Innovative Interface Bonding Technology.
PY - 2017/6/13
Y1 - 2017/6/13
N2 - Si/GaAs interfaces fabricated by surface-activated bonding at room temperature were examined by plane-view transmission electron microscopy. It was hypothesized that the interface resistance would be originated from surface defects on the Si and GaAs substrates introduced during the bonding process.
AB - Si/GaAs interfaces fabricated by surface-activated bonding at room temperature were examined by plane-view transmission electron microscopy. It was hypothesized that the interface resistance would be originated from surface defects on the Si and GaAs substrates introduced during the bonding process.
UR - http://www.scopus.com/inward/record.url?scp=85022205592&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85022205592&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2017.7947400
DO - 10.23919/LTB-3D.2017.7947400
M3 - Conference contribution
AN - SCOPUS:85022205592
T3 - Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
SP - 4
BT - Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
Y2 - 16 May 2017 through 18 May 2017
ER -