Plasma anodization of evaporated Al-InP systems

Y. Hirayama; H. M. Park; F. Koshiga; T. Sugano

doi:10.1007/BF02658913

Plasma anodization of evaporated Al-InP systems

Y. Hirayama, H. M. Park, F. Koshiga, T. Sugano

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Aluminium oxide-InP structures were fabricated by plasma anodization of evaporated Al-InP systems with intention of fabricating InP MISFETS. It was found that the resistivity and break-down strength of the A1₂O₃ film were influenced by the selection of the end point of the anodization. At appropriate conditions the resistivity of 5 × 10¹⁰ - 10¹²Ω cm for the anodic Al₂O₃ and the minimum density of the interface trap states of 4 × 10¹¹ cm^-2 ev^-1 for Al₂ O₃ -InP systems were obtained.

Original language	English
Pages (from-to)	1011-1022
Number of pages	12
Journal	Journal of Electronic Materials
Volume	11
Issue number	6
DOIs	https://doi.org/10.1007/BF02658913
Publication status	Published - 1982 Nov 1
Externally published	Yes

Keywords

AlO
InP
MIS diode
plasma anodization

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/BF02658913

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title = "Plasma anodization of evaporated Al-InP systems",

abstract = "Aluminium oxide-InP structures were fabricated by plasma anodization of evaporated Al-InP systems with intention of fabricating InP MISFETS. It was found that the resistivity and break-down strength of the A12O3 film were influenced by the selection of the end point of the anodization. At appropriate conditions the resistivity of 5 × 1010 - 1012Ω cm for the anodic Al2O3 and the minimum density of the interface trap states of 4 × 1011 cm-2 ev-1 for Al2 O3 -InP systems were obtained.",

keywords = "AlO, InP, MIS diode, plasma anodization",

author = "Y. Hirayama and Park, {H. M.} and F. Koshiga and T. Sugano",

year = "1982",

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doi = "10.1007/BF02658913",

language = "English",

volume = "11",

pages = "1011--1022",

journal = "Journal of Electronic Materials",

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T1 - Plasma anodization of evaporated Al-InP systems

AU - Hirayama, Y.

AU - Park, H. M.

AU - Koshiga, F.

AU - Sugano, T.

PY - 1982/11/1

Y1 - 1982/11/1

N2 - Aluminium oxide-InP structures were fabricated by plasma anodization of evaporated Al-InP systems with intention of fabricating InP MISFETS. It was found that the resistivity and break-down strength of the A12O3 film were influenced by the selection of the end point of the anodization. At appropriate conditions the resistivity of 5 × 1010 - 1012Ω cm for the anodic Al2O3 and the minimum density of the interface trap states of 4 × 1011 cm-2 ev-1 for Al2 O3 -InP systems were obtained.

AB - Aluminium oxide-InP structures were fabricated by plasma anodization of evaporated Al-InP systems with intention of fabricating InP MISFETS. It was found that the resistivity and break-down strength of the A12O3 film were influenced by the selection of the end point of the anodization. At appropriate conditions the resistivity of 5 × 1010 - 1012Ω cm for the anodic Al2O3 and the minimum density of the interface trap states of 4 × 1011 cm-2 ev-1 for Al2 O3 -InP systems were obtained.

KW - AlO

KW - InP

KW - MIS diode

KW - plasma anodization

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EP - 1022

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 6

ER -

Plasma anodization of evaporated Al-InP systems

Abstract

Keywords

ASJC Scopus subject areas

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